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Title: Deep Level Transient Spectroscopy Technique to Analyze Radiation Induced Defects in Power Transistors

Abstract

Deep Level Transient Spectroscopy (DLTS) technique is useful tool to study process and radiation induced defects in semiconductor materials and devices. The different types of radiation induced trap levels in the collector-base depletion region of the transistors were studied by DLTS technique.

Authors:
 [1]
  1. Department of Studies in Physics, University of Mysore, Manasagangotri, Mysore, Karnataka-570006 (India)
Publication Date:
OSTI Identifier:
21608123
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1349; Journal Issue: 1; Conference: 55. DAE solid state physics symposium 2010, Manipal (India), 26-30 Dec 2010; Other Information: DOI: 10.1063/1.3606235; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; 46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC CURRENTS; ENERGY LOSSES; IONS; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; TRANSISTORS; TRAPS; CHARGED PARTICLES; CRYSTAL STRUCTURE; CURRENTS; LOSSES; MATERIALS; RADIATION EFFECTS; SEMICONDUCTOR DEVICES; SPECTROSCOPY

Citation Formats

Prakash, A. P. Gnana. Deep Level Transient Spectroscopy Technique to Analyze Radiation Induced Defects in Power Transistors. United States: N. p., 2011. Web. doi:10.1063/1.3606235.
Prakash, A. P. Gnana. Deep Level Transient Spectroscopy Technique to Analyze Radiation Induced Defects in Power Transistors. United States. doi:10.1063/1.3606235.
Prakash, A. P. Gnana. Fri . "Deep Level Transient Spectroscopy Technique to Analyze Radiation Induced Defects in Power Transistors". United States. doi:10.1063/1.3606235.
@article{osti_21608123,
title = {Deep Level Transient Spectroscopy Technique to Analyze Radiation Induced Defects in Power Transistors},
author = {Prakash, A. P. Gnana},
abstractNote = {Deep Level Transient Spectroscopy (DLTS) technique is useful tool to study process and radiation induced defects in semiconductor materials and devices. The different types of radiation induced trap levels in the collector-base depletion region of the transistors were studied by DLTS technique.},
doi = {10.1063/1.3606235},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1349,
place = {United States},
year = {2011},
month = {7}
}