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Title: Implication of Structural Disorder in The Charge Transport Properties of Cobalt-phthalocyanine Thin Films

Abstract

The charge transport properties of 100 nm thick cobalt phthalocyanine (CoPc) films grown on single crystal Al{sub 2}O{sub 3}(0001 oriented) and quartz substrates using molecular beam epitaxy, have been investigated as a function of applied bias ({+-} 50 V) at room temperature. Films grown on Al{sub 2}O{sub 3} are highly ordered and exhibited non-hysteretic current-voltage (J-V) characteristics. On the other hand, films grown on quartz substrates are highly disordered and exhibited hysteretic J-V characteristics due to charge trapping. The analysis of J-V characteristics of films on Al{sub 2}O{sub 3} substrates show that the transport is governed by shallow trap mediated space charge limited conduction (SCLC), while for the films grown on the quartz substrate transport is through the exponentially distributed traps mediated SCLC. X-ray photoelectron spectroscopy data show that charge trapping centers in the films grown on quartz substrates are created by chemisorbed oxygen.

Authors:
; ; ; ; ; ;  [1]
  1. Technical Physics Division, Bhabha Atomic Research Center, Mumbai 400 085 (India)
Publication Date:
OSTI Identifier:
21608119
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1349; Journal Issue: 1; Conference: 55. DAE solid state physics symposium 2010, Manipal (India), 26-30 Dec 2010; Other Information: DOI: 10.1063/1.3606221; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; CHARGE EXCHANGE; CHARGE TRANSPORT; COBALT COMPLEXES; COBALT COMPOUNDS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; MOLECULAR BEAM EPITAXY; MONOCRYSTALS; PHTHALOCYANINES; QUARTZ; SPACE CHARGE; SUBSTRATES; THIN FILMS; TRAPPING; X-RAY PHOTOELECTRON SPECTROSCOPY; ALUMINIUM COMPOUNDS; CHALCOGENIDES; COMPLEXES; CRYSTAL GROWTH METHODS; CRYSTALS; DYES; ELECTRICAL PROPERTIES; ELECTRON SPECTROSCOPY; EPITAXY; FILMS; HETEROCYCLIC COMPOUNDS; MINERALS; ORGANIC COMPOUNDS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; PHYSICAL PROPERTIES; SPECTROSCOPY; TRANSITION ELEMENT COMPLEXES; TRANSITION ELEMENT COMPOUNDS

Citation Formats

Debnath, A. K., Kumar, A., Samanta, S., Singh, A., Aswal, D. K., Gupta, S. K., and Yakhmi, J. V. Implication of Structural Disorder in The Charge Transport Properties of Cobalt-phthalocyanine Thin Films. United States: N. p., 2011. Web. doi:10.1063/1.3606221.
Debnath, A. K., Kumar, A., Samanta, S., Singh, A., Aswal, D. K., Gupta, S. K., & Yakhmi, J. V. Implication of Structural Disorder in The Charge Transport Properties of Cobalt-phthalocyanine Thin Films. United States. doi:10.1063/1.3606221.
Debnath, A. K., Kumar, A., Samanta, S., Singh, A., Aswal, D. K., Gupta, S. K., and Yakhmi, J. V. Fri . "Implication of Structural Disorder in The Charge Transport Properties of Cobalt-phthalocyanine Thin Films". United States. doi:10.1063/1.3606221.
@article{osti_21608119,
title = {Implication of Structural Disorder in The Charge Transport Properties of Cobalt-phthalocyanine Thin Films},
author = {Debnath, A. K. and Kumar, A. and Samanta, S. and Singh, A. and Aswal, D. K. and Gupta, S. K. and Yakhmi, J. V.},
abstractNote = {The charge transport properties of 100 nm thick cobalt phthalocyanine (CoPc) films grown on single crystal Al{sub 2}O{sub 3}(0001 oriented) and quartz substrates using molecular beam epitaxy, have been investigated as a function of applied bias ({+-} 50 V) at room temperature. Films grown on Al{sub 2}O{sub 3} are highly ordered and exhibited non-hysteretic current-voltage (J-V) characteristics. On the other hand, films grown on quartz substrates are highly disordered and exhibited hysteretic J-V characteristics due to charge trapping. The analysis of J-V characteristics of films on Al{sub 2}O{sub 3} substrates show that the transport is governed by shallow trap mediated space charge limited conduction (SCLC), while for the films grown on the quartz substrate transport is through the exponentially distributed traps mediated SCLC. X-ray photoelectron spectroscopy data show that charge trapping centers in the films grown on quartz substrates are created by chemisorbed oxygen.},
doi = {10.1063/1.3606221},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1349,
place = {United States},
year = {2011},
month = {7}
}