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Title: Irradiation damage in Gd{sub 2}Ti{sub 2}O{sub 7} single crystals: Ballistic versus ionization processes

Abstract

The structural transformations induced in Gd{sub 2}Ti{sub 2}O{sub 7} single crystals irradiated at high energies (870-MeV Xe), where ionization processes (electronic stopping) dominate, and at low energies (4-MeV Au), where ballistic processes (nuclear stopping) dominate, have been studied via the combination of Rutherford backscattering spectrometry and channeling (RBS/C), Raman spectroscopy, and transmission electron microscopy (TEM) experiments. At high energy, amorphization occurs directly in individual ion tracks from the extreme electronic-energy deposition, and full amorphization results from the overlapping of these tracks as described by a direct impact model. The track diameters lie in the range 6-9 nm. At low energy, amorphization occurs via indirect processes, driven by ballistic nuclear energy deposition from the ions, that is accounted for in the framework of both direct-impact/defect-stimulated and multi-step damage accumulation models. The ion fluence for total amorphization of the irradiated layer is much higher at low energy (0.5 ion nm{sup -2}) than at high energy (0.05 ion nm{sup -2}), consistent with the nuclear stopping at low energy (5.2 keV/nm) compared to the electronic stopping at high energy (29 keV/nm).

Authors:
;  [1];  [2];  [3];  [4];  [5];  [6];  [7];  [8]
  1. Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse, CNRS-IN2P3-Universite Paris Sud, UMR 8609, Bat. 108, F-91405 Orsay (France)
  2. LEMHE/ICMMO, Universite Paris Sud, UMR 8182, Bat. 410, F-91405 Orsay (France)
  3. Institute for Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw, Poland and The Andrzej Soltan Institute for Nuclear Studies, 05-400 Swierk/Otwock (Poland)
  4. LPCES/ICMMO, Universite Paris Sud, UMR 8182, Bat. 410, F-91405 Orsay (France)
  5. CEMHTI, CNRS, UPR 3079, 1D avenue de la Recherche Scientifique F-45071 Orleans Cedex 2 (France)
  6. CIMAP-GANIL, CEA-CNRS-ENSICAEN, BP 5133, F-14070 Caen Cedex 5 (France)
  7. Department of Materials Science and Engineering, University of Tennessee, Knoxville, Tennessee 37996 (United States)
  8. (United States)
Publication Date:
OSTI Identifier:
21596842
Resource Type:
Journal Article
Journal Name:
Physical Review. B, Condensed Matter and Materials Physics
Additional Journal Information:
Journal Volume: 84; Journal Issue: 6; Other Information: DOI: 10.1103/PhysRevB.84.064115; (c) 2011 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 1098-0121
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; AMORPHOUS STATE; CHANNELING; CRYSTAL DEFECTS; DAMAGE; DEPOSITION; GADOLINIUM COMPOUNDS; IONIZATION; IONS; IRRADIATION; LAYERS; MEV RANGE 01-10; MEV RANGE 100-1000; MONOCRYSTALS; NUCLEAR ENERGY; RAMAN SPECTROSCOPY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; TITANATES; TRANSFORMATIONS; TRANSMISSION ELECTRON MICROSCOPY; XENON IONS; CHARGED PARTICLES; CRYSTAL STRUCTURE; CRYSTALS; ELECTRON MICROSCOPY; ENERGY; ENERGY RANGE; LASER SPECTROSCOPY; MEV RANGE; MICROSCOPY; OXYGEN COMPOUNDS; RARE EARTH COMPOUNDS; SPECTROSCOPY; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS

Citation Formats

Moll, S., Thome, L., Sattonnay, G., Jagielski, J., Decorse, C., Simon, P., Monnet, I., Weber, W. J., and Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831. Irradiation damage in Gd{sub 2}Ti{sub 2}O{sub 7} single crystals: Ballistic versus ionization processes. United States: N. p., 2011. Web. doi:10.1103/PHYSREVB.84.064115.
Moll, S., Thome, L., Sattonnay, G., Jagielski, J., Decorse, C., Simon, P., Monnet, I., Weber, W. J., & Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831. Irradiation damage in Gd{sub 2}Ti{sub 2}O{sub 7} single crystals: Ballistic versus ionization processes. United States. doi:10.1103/PHYSREVB.84.064115.
Moll, S., Thome, L., Sattonnay, G., Jagielski, J., Decorse, C., Simon, P., Monnet, I., Weber, W. J., and Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831. Mon . "Irradiation damage in Gd{sub 2}Ti{sub 2}O{sub 7} single crystals: Ballistic versus ionization processes". United States. doi:10.1103/PHYSREVB.84.064115.
@article{osti_21596842,
title = {Irradiation damage in Gd{sub 2}Ti{sub 2}O{sub 7} single crystals: Ballistic versus ionization processes},
author = {Moll, S. and Thome, L. and Sattonnay, G. and Jagielski, J. and Decorse, C. and Simon, P. and Monnet, I. and Weber, W. J. and Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831},
abstractNote = {The structural transformations induced in Gd{sub 2}Ti{sub 2}O{sub 7} single crystals irradiated at high energies (870-MeV Xe), where ionization processes (electronic stopping) dominate, and at low energies (4-MeV Au), where ballistic processes (nuclear stopping) dominate, have been studied via the combination of Rutherford backscattering spectrometry and channeling (RBS/C), Raman spectroscopy, and transmission electron microscopy (TEM) experiments. At high energy, amorphization occurs directly in individual ion tracks from the extreme electronic-energy deposition, and full amorphization results from the overlapping of these tracks as described by a direct impact model. The track diameters lie in the range 6-9 nm. At low energy, amorphization occurs via indirect processes, driven by ballistic nuclear energy deposition from the ions, that is accounted for in the framework of both direct-impact/defect-stimulated and multi-step damage accumulation models. The ion fluence for total amorphization of the irradiated layer is much higher at low energy (0.5 ion nm{sup -2}) than at high energy (0.05 ion nm{sup -2}), consistent with the nuclear stopping at low energy (5.2 keV/nm) compared to the electronic stopping at high energy (29 keV/nm).},
doi = {10.1103/PHYSREVB.84.064115},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
issn = {1098-0121},
number = 6,
volume = 84,
place = {United States},
year = {2011},
month = {8}
}