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Title: Ternary rare-earth zinc arsenides REZn{sub 1-x}As{sub 2} (RE=La-Nd, Sm)

Abstract

The ternary rare-earth zinc arsenides REZn{sub 1-x}As{sub 2} (RE=La-Nd, Sm) were prepared by reaction of the elements at 800 deg. C. Single-crystal and powder X-ray diffraction analysis revealed a defect SrZnBi{sub 2}-type average structure for the La member (Pearson symbol tI16, space group I4/mmm, Z=4; a=4.0770(9) A, c=20.533(5) A), in contrast to defect HfCuSi{sub 2}-type average structures for the remaining RE members (Pearson symbol tP8, space group P4/nmm, Z=2; a=4.0298(5)-3.9520(4) A, c=10.222(1)-10.099(1) A in the progression from Ce to Sm). The homogeneity range is not appreciable (estimated to be narrower than 0.6<1-x<0.7 in SmZn{sub 1-x}As{sub 2}) and the formula REZn{sub 0.67}As{sub 2} likely represents the Zn-rich phase boundary. The Ce-Nd members are Curie-Weiss paramagnets. LaZn{sub 0.67}As{sub 2} shows activated behavior in its electrical resistivity, whereas SmZn{sub 0.67}As{sub 2} exhibits anomalies in its temperature dependence of the electrical resistivity. - Graphical abstract: LaZn{sub 1-x}As{sub 2} adopts a SrZnBi{sub 2}-type structure whereas the remaining members of the REZn{sub 1-x}As{sub 2} series (RE=Ce-Nd, Sm) adopt a HfCuSi{sub 2}-type structure. Highlights: > REZn{sub 1-x}As{sub 2} adopts SrZnBi{sub 2}-type (RE=La) or HfCuSi{sub 2}-type (RE=Ce-Nd, Sm) structures. > Trends in RE substitution and local distortion around Zn-centered tetrahedra can be rationalized by geometrical factors. > Znmore » vacancies occur to reduce Zn-As and As-As antibonding interactions.« less

Authors:
 [1];  [1]
  1. Department of Chemistry, University of Alberta, Edmonton, Alberta, T6G 2G2 (Canada)
Publication Date:
OSTI Identifier:
21580236
Resource Type:
Journal Article
Journal Name:
Journal of Solid State Chemistry
Additional Journal Information:
Journal Volume: 184; Journal Issue: 9; Other Information: DOI: 10.1016/j.jssc.2011.07.002; PII: S0022-4596(11)00371-9; Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Journal ID: ISSN 0022-4596
Country of Publication:
United States
Language:
English
Subject:
37 INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY; DEFECTS; ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; MAGNETIC PROPERTIES; MONOCRYSTALS; RARE EARTHS; SPACE GROUPS; TEMPERATURE DEPENDENCE; TETRAGONAL LATTICES; X-RAY DIFFRACTION; ZINC ARSENIDES; ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; CRYSTAL LATTICES; CRYSTAL STRUCTURE; CRYSTALS; DIFFRACTION; ELECTRICAL PROPERTIES; ELEMENTS; METALS; PHYSICAL PROPERTIES; PNICTIDES; SCATTERING; SYMMETRY GROUPS; ZINC COMPOUNDS

Citation Formats

Stoyko, Stanislav S., and Mar, Arthur, E-mail: arthur.mar@ualberta.ca. Ternary rare-earth zinc arsenides REZn{sub 1-x}As{sub 2} (RE=La-Nd, Sm). United States: N. p., 2011. Web. doi:10.1016/j.jssc.2011.07.002.
Stoyko, Stanislav S., & Mar, Arthur, E-mail: arthur.mar@ualberta.ca. Ternary rare-earth zinc arsenides REZn{sub 1-x}As{sub 2} (RE=La-Nd, Sm). United States. doi:10.1016/j.jssc.2011.07.002.
Stoyko, Stanislav S., and Mar, Arthur, E-mail: arthur.mar@ualberta.ca. Thu . "Ternary rare-earth zinc arsenides REZn{sub 1-x}As{sub 2} (RE=La-Nd, Sm)". United States. doi:10.1016/j.jssc.2011.07.002.
@article{osti_21580236,
title = {Ternary rare-earth zinc arsenides REZn{sub 1-x}As{sub 2} (RE=La-Nd, Sm)},
author = {Stoyko, Stanislav S. and Mar, Arthur, E-mail: arthur.mar@ualberta.ca},
abstractNote = {The ternary rare-earth zinc arsenides REZn{sub 1-x}As{sub 2} (RE=La-Nd, Sm) were prepared by reaction of the elements at 800 deg. C. Single-crystal and powder X-ray diffraction analysis revealed a defect SrZnBi{sub 2}-type average structure for the La member (Pearson symbol tI16, space group I4/mmm, Z=4; a=4.0770(9) A, c=20.533(5) A), in contrast to defect HfCuSi{sub 2}-type average structures for the remaining RE members (Pearson symbol tP8, space group P4/nmm, Z=2; a=4.0298(5)-3.9520(4) A, c=10.222(1)-10.099(1) A in the progression from Ce to Sm). The homogeneity range is not appreciable (estimated to be narrower than 0.6<1-x<0.7 in SmZn{sub 1-x}As{sub 2}) and the formula REZn{sub 0.67}As{sub 2} likely represents the Zn-rich phase boundary. The Ce-Nd members are Curie-Weiss paramagnets. LaZn{sub 0.67}As{sub 2} shows activated behavior in its electrical resistivity, whereas SmZn{sub 0.67}As{sub 2} exhibits anomalies in its temperature dependence of the electrical resistivity. - Graphical abstract: LaZn{sub 1-x}As{sub 2} adopts a SrZnBi{sub 2}-type structure whereas the remaining members of the REZn{sub 1-x}As{sub 2} series (RE=Ce-Nd, Sm) adopt a HfCuSi{sub 2}-type structure. Highlights: > REZn{sub 1-x}As{sub 2} adopts SrZnBi{sub 2}-type (RE=La) or HfCuSi{sub 2}-type (RE=Ce-Nd, Sm) structures. > Trends in RE substitution and local distortion around Zn-centered tetrahedra can be rationalized by geometrical factors. > Zn vacancies occur to reduce Zn-As and As-As antibonding interactions.},
doi = {10.1016/j.jssc.2011.07.002},
journal = {Journal of Solid State Chemistry},
issn = {0022-4596},
number = 9,
volume = 184,
place = {United States},
year = {2011},
month = {9}
}