Features of the mechanisms of generation and 'Healing' of structural defects in the heavily doped intermetallic semiconductor n-ZrNiSn

Journal Article · Tue Sep 15 00:00:00 EDT 2009 · Semiconductors

DOI:https://doi.org/10.1134/S1063782609090024· OSTI ID:21562413

Hlil, E K ^[1]; Skolozdra, Ya V ^[2]; Rogl, P ^[3]; Stadnyk, Yu V; Romaka, L P; Goryn, A M ^[4]

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1. CNRS, Institut Neel (France)
2. National University 'Lvivska Politechnika' (Ukraine)
3. Universitaet Wien, Institut fuer Physikalische Chemie (Austria)
4. Ivan Franko Lviv National University (Ukraine)

The crystal structure, density of electron states, and charge-transport characteristics of an intermetallic semiconductor ZrNiSn heavily doped with acceptor impurity Y (N{sub A}{sup Y} {approx} 3.8 x 10{sup 20}-4.8 x 10{sup 21} cm{sup -3}) have been studied in the temperature range T = 80-380 K. Relation between the impurity concentration and the amplitude of a large-scale fluctuation and also the degree of occupation of the potential well of small-scale fluctuation by charge carriers (fine structure) is established. The results are discussed in the context of the Shklovskii-Efros model for a heavily doped and compensated semiconductor.

• OSTI ID: 21562413
• Journal Information: Semiconductors, Vol. 43, Issue 9; Other Information: DOI: 10.1134/S1063782609090024; Copyright (c) 2009 Pleiades Publishing, Ltd.; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AMPLITUDES
CHARGE CARRIERS
CHARGE TRANSPORT
CRYSTAL STRUCTURE
DEFECTS
DOPED MATERIALS
ELECTRONS
FINE STRUCTURE
IMPURITIES
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE
ELEMENTARY PARTICLES
FERMIONS
LEPTONS
MATERIALS