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Title: Electrical properties of In{sub 2}Se{sub 3} single crystals and photosensitivity of Al/In{sub 2}Se{sub 3} Schottky barriers

Abstract

In{sub 2}Se{sub 3} single crystals {approx}40 mm long and 14 mm in diameter were grown by the Bridgman method. The composition of grown single crystals and their crystal structure were determined. The conductivity ({sigma}) and Hall constant (R) of grown single crystals were measured and the first Schottky barriers Al/n-In{sub 2}Se{sub 3} were fabricated. Rectification and photovoltaic effect were detected in the new structures. Based on the study of the photosensitivity spectra of Al/n-In{sub 2}Se{sub 3} structures, the nature of the interband transitions and band gap of In{sub 2}Se{sub 3} crystals were determined. It was concluded that the new structures can be applied to develop broadband photoconverters of optical radiation.

Authors:
 [1]; ;  [2];  [3];  [4]
  1. Belarussian State University of Informatics and Radioelectronics (Belarus)
  2. National University 'Lvivs'ka Polytechnika' (Ukraine)
  3. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
  4. Turkmenian State University (Turkmenistan)
Publication Date:
OSTI Identifier:
21562409
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 43; Journal Issue: 9; Other Information: DOI: 10.1134/S1063782609090061; Copyright (c) 2009 Pleiades Publishing, Ltd.; Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BRIDGMAN METHOD; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ENERGY-LEVEL TRANSITIONS; INDIUM SELENIDES; MONOCRYSTALS; PHOTOSENSITIVITY; PHOTOVOLTAIC EFFECT; SPECTRA; CHALCOGENIDES; CRYSTAL GROWTH METHODS; CRYSTALS; INDIUM COMPOUNDS; PHOTOELECTRIC EFFECT; PHYSICAL PROPERTIES; SELENIDES; SELENIUM COMPOUNDS; SENSITIVITY

Citation Formats

Bodnar, I V, Ilchuk, G A, Petrus', R Yu, Rud', V. Yu., E-mail: rudvas@spbstu.ru, Rud', Yu V, and Serginov, M. Electrical properties of In{sub 2}Se{sub 3} single crystals and photosensitivity of Al/In{sub 2}Se{sub 3} Schottky barriers. United States: N. p., 2009. Web. doi:10.1134/S1063782609090061.
Bodnar, I V, Ilchuk, G A, Petrus', R Yu, Rud', V. Yu., E-mail: rudvas@spbstu.ru, Rud', Yu V, & Serginov, M. Electrical properties of In{sub 2}Se{sub 3} single crystals and photosensitivity of Al/In{sub 2}Se{sub 3} Schottky barriers. United States. https://doi.org/10.1134/S1063782609090061
Bodnar, I V, Ilchuk, G A, Petrus', R Yu, Rud', V. Yu., E-mail: rudvas@spbstu.ru, Rud', Yu V, and Serginov, M. 2009. "Electrical properties of In{sub 2}Se{sub 3} single crystals and photosensitivity of Al/In{sub 2}Se{sub 3} Schottky barriers". United States. https://doi.org/10.1134/S1063782609090061.
@article{osti_21562409,
title = {Electrical properties of In{sub 2}Se{sub 3} single crystals and photosensitivity of Al/In{sub 2}Se{sub 3} Schottky barriers},
author = {Bodnar, I V and Ilchuk, G A and Petrus', R Yu and Rud', V. Yu., E-mail: rudvas@spbstu.ru and Rud', Yu V and Serginov, M},
abstractNote = {In{sub 2}Se{sub 3} single crystals {approx}40 mm long and 14 mm in diameter were grown by the Bridgman method. The composition of grown single crystals and their crystal structure were determined. The conductivity ({sigma}) and Hall constant (R) of grown single crystals were measured and the first Schottky barriers Al/n-In{sub 2}Se{sub 3} were fabricated. Rectification and photovoltaic effect were detected in the new structures. Based on the study of the photosensitivity spectra of Al/n-In{sub 2}Se{sub 3} structures, the nature of the interband transitions and band gap of In{sub 2}Se{sub 3} crystals were determined. It was concluded that the new structures can be applied to develop broadband photoconverters of optical radiation.},
doi = {10.1134/S1063782609090061},
url = {https://www.osti.gov/biblio/21562409}, journal = {Semiconductors},
issn = {1063-7826},
number = 9,
volume = 43,
place = {United States},
year = {Tue Sep 15 00:00:00 EDT 2009},
month = {Tue Sep 15 00:00:00 EDT 2009}
}