Electrical properties of In{sub 2}Se{sub 3} single crystals and photosensitivity of Al/In{sub 2}Se{sub 3} Schottky barriers
Abstract
In{sub 2}Se{sub 3} single crystals {approx}40 mm long and 14 mm in diameter were grown by the Bridgman method. The composition of grown single crystals and their crystal structure were determined. The conductivity ({sigma}) and Hall constant (R) of grown single crystals were measured and the first Schottky barriers Al/n-In{sub 2}Se{sub 3} were fabricated. Rectification and photovoltaic effect were detected in the new structures. Based on the study of the photosensitivity spectra of Al/n-In{sub 2}Se{sub 3} structures, the nature of the interband transitions and band gap of In{sub 2}Se{sub 3} crystals were determined. It was concluded that the new structures can be applied to develop broadband photoconverters of optical radiation.
- Authors:
-
- Belarussian State University of Informatics and Radioelectronics (Belarus)
- National University 'Lvivs'ka Polytechnika' (Ukraine)
- Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)
- Turkmenian State University (Turkmenistan)
- Publication Date:
- OSTI Identifier:
- 21562409
- Resource Type:
- Journal Article
- Journal Name:
- Semiconductors
- Additional Journal Information:
- Journal Volume: 43; Journal Issue: 9; Other Information: DOI: 10.1134/S1063782609090061; Copyright (c) 2009 Pleiades Publishing, Ltd.; Journal ID: ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 36 MATERIALS SCIENCE; BRIDGMAN METHOD; CRYSTAL STRUCTURE; ELECTRICAL PROPERTIES; ENERGY-LEVEL TRANSITIONS; INDIUM SELENIDES; MONOCRYSTALS; PHOTOSENSITIVITY; PHOTOVOLTAIC EFFECT; SPECTRA; CHALCOGENIDES; CRYSTAL GROWTH METHODS; CRYSTALS; INDIUM COMPOUNDS; PHOTOELECTRIC EFFECT; PHYSICAL PROPERTIES; SELENIDES; SELENIUM COMPOUNDS; SENSITIVITY
Citation Formats
Bodnar, I V, Ilchuk, G A, Petrus', R Yu, Rud', V. Yu., E-mail: rudvas@spbstu.ru, Rud', Yu V, and Serginov, M. Electrical properties of In{sub 2}Se{sub 3} single crystals and photosensitivity of Al/In{sub 2}Se{sub 3} Schottky barriers. United States: N. p., 2009.
Web. doi:10.1134/S1063782609090061.
Bodnar, I V, Ilchuk, G A, Petrus', R Yu, Rud', V. Yu., E-mail: rudvas@spbstu.ru, Rud', Yu V, & Serginov, M. Electrical properties of In{sub 2}Se{sub 3} single crystals and photosensitivity of Al/In{sub 2}Se{sub 3} Schottky barriers. United States. https://doi.org/10.1134/S1063782609090061
Bodnar, I V, Ilchuk, G A, Petrus', R Yu, Rud', V. Yu., E-mail: rudvas@spbstu.ru, Rud', Yu V, and Serginov, M. 2009.
"Electrical properties of In{sub 2}Se{sub 3} single crystals and photosensitivity of Al/In{sub 2}Se{sub 3} Schottky barriers". United States. https://doi.org/10.1134/S1063782609090061.
@article{osti_21562409,
title = {Electrical properties of In{sub 2}Se{sub 3} single crystals and photosensitivity of Al/In{sub 2}Se{sub 3} Schottky barriers},
author = {Bodnar, I V and Ilchuk, G A and Petrus', R Yu and Rud', V. Yu., E-mail: rudvas@spbstu.ru and Rud', Yu V and Serginov, M},
abstractNote = {In{sub 2}Se{sub 3} single crystals {approx}40 mm long and 14 mm in diameter were grown by the Bridgman method. The composition of grown single crystals and their crystal structure were determined. The conductivity ({sigma}) and Hall constant (R) of grown single crystals were measured and the first Schottky barriers Al/n-In{sub 2}Se{sub 3} were fabricated. Rectification and photovoltaic effect were detected in the new structures. Based on the study of the photosensitivity spectra of Al/n-In{sub 2}Se{sub 3} structures, the nature of the interband transitions and band gap of In{sub 2}Se{sub 3} crystals were determined. It was concluded that the new structures can be applied to develop broadband photoconverters of optical radiation.},
doi = {10.1134/S1063782609090061},
url = {https://www.osti.gov/biblio/21562409},
journal = {Semiconductors},
issn = {1063-7826},
number = 9,
volume = 43,
place = {United States},
year = {Tue Sep 15 00:00:00 EDT 2009},
month = {Tue Sep 15 00:00:00 EDT 2009}
}