Experimental 4H-SiC junction-barrier Schottky (JBS) diodes

Journal Article · Tue Sep 15 00:00:00 EDT 2009 · Semiconductors

DOI:https://doi.org/10.1134/S106378260909019X· OSTI ID:21562398

Grekhov, I V; Potapov, A S; Il'inskaya, N D; Samsonova, T P; Kon'kov, O I ^[1]

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1. Russian Academy of Sciences, Ioffe Physicotechnical Institute (Russian Federation)

4H-SiC junction-barrier Schottky (JBS) diodes have been fabricated with local p-n junctions under the Schottky contact formed by nonequilibrium diffusion of boron. Static and dynamic characteristics of the JBS diodes are compared with those of similar 4H-SiC Schottky diodes. It is shown that, compared with ordinary Schottky diodes, the JBS diodes have leakage currents that are, on average, a factor of 200 lower at the same reverse bias. The reverse recovery charge is the same for both types of diodes and equal to the charge of majority carriers removed from the n-type base region in switching.

• OSTI ID: 21562398
• Journal Information: Semiconductors, Vol. 43, Issue 9; Other Information: DOI: 10.1134/S106378260909019X; Copyright (c) 2009 Pleiades Publishing, Ltd.; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BORON
CARRIERS
DIFFUSION
LEAKAGE CURRENT
P-N JUNCTIONS
SCHOTTKY BARRIER DIODES
SILICON CARBIDES
CARBIDES
CARBON COMPOUNDS
CURRENTS
ELECTRIC CURRENTS
ELEMENTS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SEMIMETALS
SILICON COMPOUNDS