The initial stage of growth of crystalline nanowhiskers

Journal Article · Fri Jan 15 00:00:00 EST 2010 · Semiconductors

DOI:https://doi.org/10.1134/S1063782610010197· OSTI ID:21562360

Nazarenko, M B; Cirlin, G E; Samsonenko, Yu B; Dubrovskii, V G ^[1]

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1. Russian Academy of Sciences, St. Petersburg Physics and Technology Center for Research and Education (Russian Federation)

The initial stage of formation of semiconductor nanowhiskers by the vapor-liquid-solid mechanism is studied theoretically and experimentally. It is shown that small-sized droplets either are overgrown or emerge together with the surface of the two-dimensional epitaxial layer. The geometric shape of the nanowhiskers at the initial stage of growth is calculated. Experimental data on the formation of GaAs nanowhiskers by molecular beam epitaxy on the GaAs(111)As substrates activated with Au are reported.

• OSTI ID: 21562360
• Journal Information: Semiconductors, Vol. 44, Issue 1; Other Information: DOI: 10.1134/S1063782610010197; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
DROPLETS
EXPERIMENTAL DATA
GALLIUM ARSENIDES
LAYERS
LIQUIDS
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
SEMICONDUCTOR MATERIALS
SHAPE
SOLIDS
SUBSTRATES
SURFACES
VAPORS
WHISKERS
ARSENIC COMPOUNDS
ARSENIDES
CRYSTAL GROWTH METHODS
CRYSTALS
DATA
EPITAXY
FLUIDS
GALLIUM COMPOUNDS
GASES
INFORMATION
MATERIALS
MONOCRYSTALS
NUMERICAL DATA
PARTICLES
PNICTIDES