Features of subthreshold defect formation in CdS and CdS:Cu single crystals subjected to irradiation with X-ray photons

Journal Article · Sat May 15 00:00:00 EDT 2010 · Semiconductors

DOI:https://doi.org/10.1134/S1063782610050210· OSTI ID:21562293

Davidyuk, H Ye; Bozhko, V V ^[1]; Kazukauskas, V ^[2]

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1. Lesya Ukrainka Volyn National University (Ukraine)
2. Vilnius University (Lithuania)

Experimental results of the study of the effect of irradiation with 230-keV electrons and with X-ray photons with energies of 8.06 and 17.5 keV and the effect of quenching on the formation and reconstruction of the centers of slow recombination of nonequilibrium charge carriers (the so-called r centers) in nominally undoped and Cu doped (N{sub Cu} {approx} 10{sup 18} cm{sup -3}) CdS single crystals are reported. It is shown that defects in cadmium sublattice in the crystal (specifically, the V{sub Cd} vacancies and the Cu{sub Cd} defects with parameters close to those of the above vacancies) are responsible for the r centers. In the case of the X-ray irradiation of both undoped and Cu-doped CdS single crystals, subthreshold defect formation of cadmium vacancies and Cu{sub Cd} defects takes place; this occurs at sites with distorted and weakened interatomic bonds, i.e., at 'weak sites' near large structural imperfections of the lattice, of technological or other origin. Starting with a quenching temperature 170 deg. C, the spectrum of slow-recombination centers is appreciably affected by thermally formed vacancies V{sub Cd} and secondary defects Cu{sub Cd}. At quenching temperatures higher than 250 deg. C, a significant contribution to the spectrum of optical quenching of photoconductivity is made by thermally introduced free (away from structural imperfections) r centers, i.e., the V{sub Cd} and Cu{sub Cd} defects.

• OSTI ID: 21562293
• Journal Information: Semiconductors, Vol. 44, Issue 5; Other Information: DOI: 10.1134/S1063782610050210; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CADMIUM
CADMIUM SULFIDES
CHARGE CARRIERS
DEFECTS
DOPED MATERIALS
ELECTRONS
IRRADIATION
MONOCRYSTALS
PHOTOCONDUCTIVITY
PHOTONS
QUENCHING
R CENTERS
RECOMBINATION
X RADIATION
BOSONS
CADMIUM COMPOUNDS
CHALCOGENIDES
COLOR CENTERS
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
CRYSTALS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELEMENTARY PARTICLES
ELEMENTS
FERMIONS
INORGANIC PHOSPHORS
IONIZING RADIATIONS
LEPTONS
MASSLESS PARTICLES
MATERIALS
METALS
PHOSPHORS
PHYSICAL PROPERTIES
POINT DEFECTS
RADIATIONS
SULFIDES
SULFUR COMPOUNDS
VACANCIES