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Title: Optical properties of quaternary GaN{sub x}As{sub y}P{sub 1-x-y} semiconductor alloys

Journal Article · · Semiconductors
 [1];  [2];  [3]
  1. Russian Academy of Sciences, St. Petersburg Physics and Technology Center for Research and Education (Russian Federation)
  2. Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)
  3. St. Petersburg State Polytechnical University (Russian Federation)

The optical properties of quaternary GaN{sub x}As{sub y}P{sub 1-x-y} semiconductor alloys grown on a GaP (100) substrate surface are studied by photoluminescence spectroscopy in the temperature range 20-300 K and by photoluminescence excitation spectroscopy at liquid-nitrogen temperature. The measurements are carried out for the GaN{sub x}As{sub y}P{sub 1-x-y} alloys, for which the nitrogen and arsenic molar fractions x and y range from 0.006 to 0.012 and from 0.00 to 0.18, respectively. A comparative analysis of the data is conducted, and the dependences of the energy position of the photoluminescence peak on the composition of the quaternary alloy are established. From the studies of photoluminescence in the range 20-300 K, it is found that the temperature dependence of the position of the photoluminescence peak substantially differs from the behavior described by Varshni's expression.

OSTI ID:
21562266
Journal Information:
Semiconductors, Vol. 44, Issue 7; Other Information: DOI: 10.1134/S1063782610070043; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7826
Country of Publication:
United States
Language:
English