Optical properties of quaternary GaN{sub x}As{sub y}P{sub 1-x-y} semiconductor alloys
- Russian Academy of Sciences, St. Petersburg Physics and Technology Center for Research and Education (Russian Federation)
- Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)
- St. Petersburg State Polytechnical University (Russian Federation)
The optical properties of quaternary GaN{sub x}As{sub y}P{sub 1-x-y} semiconductor alloys grown on a GaP (100) substrate surface are studied by photoluminescence spectroscopy in the temperature range 20-300 K and by photoluminescence excitation spectroscopy at liquid-nitrogen temperature. The measurements are carried out for the GaN{sub x}As{sub y}P{sub 1-x-y} alloys, for which the nitrogen and arsenic molar fractions x and y range from 0.006 to 0.012 and from 0.00 to 0.18, respectively. A comparative analysis of the data is conducted, and the dependences of the energy position of the photoluminescence peak on the composition of the quaternary alloy are established. From the studies of photoluminescence in the range 20-300 K, it is found that the temperature dependence of the position of the photoluminescence peak substantially differs from the behavior described by Varshni's expression.
- OSTI ID:
- 21562266
- Journal Information:
- Semiconductors, Vol. 44, Issue 7; Other Information: DOI: 10.1134/S1063782610070043; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ALLOYS
ARSENIC
EXCITATION
GALLIUM PHOSPHIDES
LIQUIDS
NITROGEN
OPTICAL PROPERTIES
PEAKS
PHOTOLUMINESCENCE
QUATERNARY ALLOY SYSTEMS
SEMICONDUCTOR MATERIALS
SPECTROSCOPY
SUBSTRATES
SURFACES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE
ALLOY SYSTEMS
ELEMENTS
EMISSION
ENERGY-LEVEL TRANSITIONS
FLUIDS
GALLIUM COMPOUNDS
LUMINESCENCE
MATERIALS
NONMETALS
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTON EMISSION
PHYSICAL PROPERTIES
PNICTIDES
SEMIMETALS