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Title: Terahertz emission and photoconductivity in n-type GaAs/AlGaAs quantum wells: the role of resonant impurity states

Abstract

Terahertz emission spectra in a longitudinal electric field and lateral photoconductivity spectra under terahertz illumination have been studied in structures with GaAs/AlGaAs quantum wells (QWs). It is shown that the spectra contain features associated with electron transitions involving resonant impurity states related to the second quantum-well subband. Calculations of the energy spectrum of impurity states and matrix elements of optical transitions made by taking into account various positions of the impurity relative to the QW center confirm the assumptions made.

Authors:
; ; ; ;  [1]; ; ; ;  [2];  [3]; ; ; ;  [4]
  1. St. Petersburg State Polytechnic University (Russian Federation)
  2. Russian Academy of Sciences, Ioffe Physical Technical Institute (Russian Federation)
  3. St. Petersburg Academic University, Research and Education Center for Nanotechnology, Russian Academy of Sciences (Russian Federation)
  4. Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
Publication Date:
OSTI Identifier:
21562192
Resource Type:
Journal Article
Journal Name:
Semiconductors
Additional Journal Information:
Journal Volume: 44; Journal Issue: 11; Other Information: DOI: 10.1134/S1063782610110023; Copyright (c) 2010 Pleiades Publishing, Ltd.; Journal ID: ISSN 1063-7826
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM ARSENIDES; ELECTRIC FIELDS; ELECTRONS; EMISSION; EMISSION SPECTRA; ENERGY SPECTRA; GALLIUM ARSENIDES; IMPURITIES; MATRIX ELEMENTS; PHOTOCONDUCTIVITY; QUANTUM WELLS; ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTARY PARTICLES; FERMIONS; GALLIUM COMPOUNDS; LEPTONS; NANOSTRUCTURES; PHYSICAL PROPERTIES; PNICTIDES; SPECTRA

Citation Formats

Firsov, D. A., E-mail: dmfir@rphf.spbstu.ru, Shalygin, V A, Panevin, V Yu, Melentyev, G A, Sofronov, A N, Vorobjev, L E, Andrianov, A V, Zakhar'in, A O, Mikhrin, V S, Vasil'ev, A P, Zhukov, A E, Gavrilenko, L V, Gavrilenko, V I, Antonov, A V, and Aleshkin, V Ya. Terahertz emission and photoconductivity in n-type GaAs/AlGaAs quantum wells: the role of resonant impurity states. United States: N. p., 2010. Web. doi:10.1134/S1063782610110023.
Firsov, D. A., E-mail: dmfir@rphf.spbstu.ru, Shalygin, V A, Panevin, V Yu, Melentyev, G A, Sofronov, A N, Vorobjev, L E, Andrianov, A V, Zakhar'in, A O, Mikhrin, V S, Vasil'ev, A P, Zhukov, A E, Gavrilenko, L V, Gavrilenko, V I, Antonov, A V, & Aleshkin, V Ya. Terahertz emission and photoconductivity in n-type GaAs/AlGaAs quantum wells: the role of resonant impurity states. United States. https://doi.org/10.1134/S1063782610110023
Firsov, D. A., E-mail: dmfir@rphf.spbstu.ru, Shalygin, V A, Panevin, V Yu, Melentyev, G A, Sofronov, A N, Vorobjev, L E, Andrianov, A V, Zakhar'in, A O, Mikhrin, V S, Vasil'ev, A P, Zhukov, A E, Gavrilenko, L V, Gavrilenko, V I, Antonov, A V, and Aleshkin, V Ya. Mon . "Terahertz emission and photoconductivity in n-type GaAs/AlGaAs quantum wells: the role of resonant impurity states". United States. https://doi.org/10.1134/S1063782610110023.
@article{osti_21562192,
title = {Terahertz emission and photoconductivity in n-type GaAs/AlGaAs quantum wells: the role of resonant impurity states},
author = {Firsov, D. A., E-mail: dmfir@rphf.spbstu.ru and Shalygin, V A and Panevin, V Yu and Melentyev, G A and Sofronov, A N and Vorobjev, L E and Andrianov, A V and Zakhar'in, A O and Mikhrin, V S and Vasil'ev, A P and Zhukov, A E and Gavrilenko, L V and Gavrilenko, V I and Antonov, A V and Aleshkin, V Ya},
abstractNote = {Terahertz emission spectra in a longitudinal electric field and lateral photoconductivity spectra under terahertz illumination have been studied in structures with GaAs/AlGaAs quantum wells (QWs). It is shown that the spectra contain features associated with electron transitions involving resonant impurity states related to the second quantum-well subband. Calculations of the energy spectrum of impurity states and matrix elements of optical transitions made by taking into account various positions of the impurity relative to the QW center confirm the assumptions made.},
doi = {10.1134/S1063782610110023},
url = {https://www.osti.gov/biblio/21562192}, journal = {Semiconductors},
issn = {1063-7826},
number = 11,
volume = 44,
place = {United States},
year = {2010},
month = {11}
}