Low-field anomaly of the hall effect in disordered two-dimensional systems
- Russian Academy of Sciences, Institute of Metal Physics, Ural Division (Russian Federation)
- Ural State University (Russian Federation)
This study is devoted to investigation of the nonlinear behavior of the Hall resistance in low magnetic fields. When investigating two-dimensional electron gas in single GaAs/In{sub x}Ga{sub 1-x}As/GaAs quantum wells, it is shown that the anomaly of the Hall effect in disordered systems can be described taking into account the second-order quantum corrections to conductivity.
- OSTI ID:
- 21562185
- Journal Information:
- Semiconductors, Vol. 44, Issue 11; Other Information: DOI: 10.1134/S1063782610110102; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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