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Title: Low-field anomaly of the hall effect in disordered two-dimensional systems

Journal Article · · Semiconductors
 [1]; ;  [2];  [1]
  1. Russian Academy of Sciences, Institute of Metal Physics, Ural Division (Russian Federation)
  2. Ural State University (Russian Federation)

This study is devoted to investigation of the nonlinear behavior of the Hall resistance in low magnetic fields. When investigating two-dimensional electron gas in single GaAs/In{sub x}Ga{sub 1-x}As/GaAs quantum wells, it is shown that the anomaly of the Hall effect in disordered systems can be described taking into account the second-order quantum corrections to conductivity.

OSTI ID:
21562185
Journal Information:
Semiconductors, Vol. 44, Issue 11; Other Information: DOI: 10.1134/S1063782610110102; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7826
Country of Publication:
United States
Language:
English