Kinetics of terahertz photoconductivity in p-Ge under impurity breakdown conditions
- Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
Relaxation times of impurity photoconductivity in p-Ge samples excited by a nanosecond narrow-band source of terahertz radiation are studied at various bias voltages. It is shown that the relaxation time in prebreakdown fields increases with the applied electric field and decreases as the impurity breakdown field is exceeded. Nonmonotonic photoconductivity kinetics is observed in the studied samples differing by acceptor concentrations and degrees of compensation when approaching the impurity breakdown field.
- OSTI ID:
- 21562177
- Journal Information:
- Semiconductors, Vol. 44, Issue 11; Other Information: DOI: 10.1134/S1063782610110199; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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