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Title: High-power microwave LDMOS transistors for wireless data transmission technologies (Review)

Abstract

The fields of the application, structure, fabrication, and packaging technology of high-power microwave LDMOS transistors and the main advantages of these devices were analyzed. Basic physical parameters and some technology factors were matched for optimum device operation. Solid-state microwave electronics has been actively developed for the last 10-15 years. Simultaneously with improvement of old devices, new devices and structures are actively being adopted and developed and new semiconductor materials are being commercialized. Microwave LDMOS technology is in demand in such fields as avionics, civil and military radars, repeaters, base stations of cellular communication systems, television and broadcasting transmitters, and transceivers for high-speed wireless computer networks (promising Wi-Fi and Wi-Max standards).

Authors:
;  [1]
  1. Moscow Institute of Electronic Technology, SMC Technological Center (Russian Federation)
Publication Date:
OSTI Identifier:
21562163
Resource Type:
Journal Article
Resource Relation:
Journal Name: Semiconductors; Journal Volume: 44; Journal Issue: 13; Other Information: DOI: 10.1134/S1063782610130105; Copyright (c) 2010 Pleiades Publishing, Ltd.
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; 36 MATERIALS SCIENCE; COMPUTER NETWORKS; DATA TRANSMISSION; EQUIPMENT; MICROWAVE RADIATION; PACKAGING; RADAR; SEMICONDUCTOR MATERIALS; SOLIDS; TRANSISTORS; COMMUNICATIONS; ELECTROMAGNETIC RADIATION; MATERIALS; MEASURING INSTRUMENTS; RADIATIONS; RANGE FINDERS; SEMICONDUCTOR DEVICES

Citation Formats

Kuznetsov, E. V., E-mail: E.Kouzntsov@tcen.ru, and Shemyakin, A. V.. High-power microwave LDMOS transistors for wireless data transmission technologies (Review). United States: N. p., 2010. Web. doi:10.1134/S1063782610130105.
Kuznetsov, E. V., E-mail: E.Kouzntsov@tcen.ru, & Shemyakin, A. V.. High-power microwave LDMOS transistors for wireless data transmission technologies (Review). United States. doi:10.1134/S1063782610130105.
Kuznetsov, E. V., E-mail: E.Kouzntsov@tcen.ru, and Shemyakin, A. V.. Wed . "High-power microwave LDMOS transistors for wireless data transmission technologies (Review)". United States. doi:10.1134/S1063782610130105.
@article{osti_21562163,
title = {High-power microwave LDMOS transistors for wireless data transmission technologies (Review)},
author = {Kuznetsov, E. V., E-mail: E.Kouzntsov@tcen.ru and Shemyakin, A. V.},
abstractNote = {The fields of the application, structure, fabrication, and packaging technology of high-power microwave LDMOS transistors and the main advantages of these devices were analyzed. Basic physical parameters and some technology factors were matched for optimum device operation. Solid-state microwave electronics has been actively developed for the last 10-15 years. Simultaneously with improvement of old devices, new devices and structures are actively being adopted and developed and new semiconductor materials are being commercialized. Microwave LDMOS technology is in demand in such fields as avionics, civil and military radars, repeaters, base stations of cellular communication systems, television and broadcasting transmitters, and transceivers for high-speed wireless computer networks (promising Wi-Fi and Wi-Max standards).},
doi = {10.1134/S1063782610130105},
journal = {Semiconductors},
number = 13,
volume = 44,
place = {United States},
year = {Wed Dec 15 00:00:00 EST 2010},
month = {Wed Dec 15 00:00:00 EST 2010}
}