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Title: High-power microwave LDMOS transistors for wireless data transmission technologies (Review)

Journal Article · · Semiconductors
 [1]
  1. Moscow Institute of Electronic Technology, SMC Technological Center (Russian Federation)

The fields of the application, structure, fabrication, and packaging technology of high-power microwave LDMOS transistors and the main advantages of these devices were analyzed. Basic physical parameters and some technology factors were matched for optimum device operation. Solid-state microwave electronics has been actively developed for the last 10-15 years. Simultaneously with improvement of old devices, new devices and structures are actively being adopted and developed and new semiconductor materials are being commercialized. Microwave LDMOS technology is in demand in such fields as avionics, civil and military radars, repeaters, base stations of cellular communication systems, television and broadcasting transmitters, and transceivers for high-speed wireless computer networks (promising Wi-Fi and Wi-Max standards).

OSTI ID:
21562163
Journal Information:
Semiconductors, Vol. 44, Issue 13; Other Information: DOI: 10.1134/S1063782610130105; Copyright (c) 2010 Pleiades Publishing, Ltd.; ISSN 1063-7826
Country of Publication:
United States
Language:
English