Diluted magnetic semiconductor effects in Mn-implanted silicon carbide

Journal Article · Fri Apr 15 00:00:00 EDT 2011 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3581142· OSTI ID:21560177

Komarov, A V; Ryabchenko, S M ^[1]; Los, A V ^[2]; Romanenko, S M ^[2]

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1. Institute of Physics of the National Academy of Sciences of Ukraine, 46 Nauki Ave., Kiev 03028 (Ukraine)
2. ISS Ltd., Semiconductors and Circuits Lab, 15 Bozhenko Street, Kiev 03680 (Ukraine)

Light transmission and Faraday rotation spectra measured at the temperature of 2 K were compared for silicon carbide single crystals of 4H polytype (4H-SiC), implanted with 3.8 x 10{sup 16} cm{sup -2} of Mn ions at the beam energy of 190 keV, and a control 4H-SiC single crystal sample, which was not implanted. Mn ion implantation led to the creation of a Mn-doped surface layer with the average Mn concentration of 10{sup 21} cm{sup -3} and a thickness of approximately 0.2 {mu}m. Transmission of light through the implanted crystal changed only slightly in comparison with the control sample, which however, corresponded to a relatively strong attenuation in the implanted layer. This was interpreted as a result of scattering, which emerges in the surface layer due to optical nonuniformities, created by the high energy ion irradiation. The presence of a thin Mn-ion-containing surface layer led, despite its small thickness, to noticeable changes in the sample Faraday rotation spectra. The estimated values of the Verdet constant for this layer were about three orders of magnitude larger and of opposite sign compared to the Verdet constant values of the undoped sample. Magnetic field dependencies of the Faraday rotation contribution from the implanted layer were found to be saturating functions, which points to a proportionality of the Faraday rotation to the magnetization of the paramagnetic Mn ion subsystem. Based on these findings we conclude that the Mn-implanted SiC layer exhibits magneto-optical properties typical of a diluted magnetic semiconductor. At the same time, no ferromagnetic ordering was observed in the studied (Si, Mn)C sample.

• OSTI ID: 21560177
• Journal Information: Journal of Applied Physics, Vol. 109, Issue 8; Other Information: DOI: 10.1063/1.3581142; (c) 2011 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
COMPARATIVE EVALUATIONS
DOPED MATERIALS
FARADAY EFFECT
ION IMPLANTATION
KEV RANGE 100-1000
LAYERS
LIGHT TRANSMISSION
MAGNETIC FIELDS
MAGNETIC SEMICONDUCTORS
MAGNETIZATION
MANGANESE ADDITIONS
MANGANESE IONS
MONOCRYSTALS
OPTICAL PROPERTIES
PARAMAGNETISM
SILICON CARBIDES
SPECTRA
SURFACES
TEMPERATURE RANGE 0000-0013 K
ALLOYS
CARBIDES
CARBON COMPOUNDS
CHARGED PARTICLES
CRYSTALS
ENERGY RANGE
EVALUATION
IONS
KEV RANGE
MAGNETISM
MANGANESE ALLOYS
MATERIALS
PHYSICAL PROPERTIES
SEMICONDUCTOR MATERIALS
SILICON COMPOUNDS
TEMPERATURE RANGE
TRANSITION ELEMENT ALLOYS
TRANSMISSION