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Title: Epitaxial high saturation magnetization FeN thin films on Fe(001) seeded GaAs(001) single crystal wafer using facing target sputterings

Abstract

It was demonstrated that Fe-N martensite ({alpha}') films were grown epitaxially on Fe(001) seeded GaAs(001) single crystal wafer by using a facing target sputtering method. X-ray diffraction pattern implies an increasing c lattice constant as the N concentration increases in the films. Partially ordered Fe{sub 16}N{sub 2} films were synthesized after in situ post-annealing the as-sputtered samples with pure Fe{sub 8}N phase. Multiple characterization techniques including XRD, XRR, TEM, and AES were used to determine the sample structure. The saturation magnetization of films with pure Fe{sub 8}N phase measured by VSM was evaluated in the range of 2.0-2.2 T. The post annealed films show systematic and dramatic increase on the saturation magnetization, which possess an average value of 2.6 T. These observations support the existence of giant saturation magnetization in {alpha}''-Fe{sub 16}N{sub 2} phase that is consistent with a recent proposed cluster-atom model and the first principles calculation [N. Ji, X. Q. Liu, and J. P. Wang, New J. Phys. 12 063032 (2010)].

Authors:
; ;  [1]
  1. Center for Micromagnetics and Information Technologies (MINT) and Department of Electrical and Computer Engineering, University of Minnesota, 200 Union St SE, 4-174 EE/CSci, Minneapolis, Minnesota 55455 (United States)
Publication Date:
OSTI Identifier:
21560113
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 109; Journal Issue: 7; Conference: 55. annual conference on magnetism and magnetic materials, Atlanta, GA (United States), 14-18 Nov 2010; Other Information: DOI: 10.1063/1.3565403; (c) 2011 American Institute of Physics; Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; ANNEALING; AUGER ELECTRON SPECTROSCOPY; CRYSTAL STRUCTURE; EPITAXY; FERROMAGNETIC MATERIALS; GALLIUM ARSENIDES; IRON NITRIDES; LATTICE PARAMETERS; LAYERS; MAGNETIC MOMENTS; MAGNETIZATION; MARTENSITE; MONOCRYSTALS; REFLECTION; SATURATION; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VIBRATING SAMPLE MAGNETOMETERS; X RADIATION; X-RAY DIFFRACTION; ALLOYS; ARSENIC COMPOUNDS; ARSENIDES; CARBON ADDITIONS; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; CRYSTALS; DIFFRACTION; ELECTROMAGNETIC RADIATION; ELECTRON MICROSCOPY; ELECTRON SPECTROSCOPY; FILMS; GALLIUM COMPOUNDS; HEAT TREATMENTS; IONIZING RADIATIONS; IRON ALLOYS; IRON COMPOUNDS; MAGNETIC MATERIALS; MAGNETOMETERS; MATERIALS; MEASURING INSTRUMENTS; MICROSCOPY; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES; RADIATIONS; SCATTERING; SPECTROSCOPY; TRANSITION ELEMENT ALLOYS; TRANSITION ELEMENT COMPOUNDS

Citation Formats

Nian, Ji, Yiming, Wu, and Jianping, Wang. Epitaxial high saturation magnetization FeN thin films on Fe(001) seeded GaAs(001) single crystal wafer using facing target sputterings. United States: N. p., 2011. Web. doi:10.1063/1.3565403.
Nian, Ji, Yiming, Wu, & Jianping, Wang. Epitaxial high saturation magnetization FeN thin films on Fe(001) seeded GaAs(001) single crystal wafer using facing target sputterings. United States. https://doi.org/10.1063/1.3565403
Nian, Ji, Yiming, Wu, and Jianping, Wang. Fri . "Epitaxial high saturation magnetization FeN thin films on Fe(001) seeded GaAs(001) single crystal wafer using facing target sputterings". United States. https://doi.org/10.1063/1.3565403.
@article{osti_21560113,
title = {Epitaxial high saturation magnetization FeN thin films on Fe(001) seeded GaAs(001) single crystal wafer using facing target sputterings},
author = {Nian, Ji and Yiming, Wu and Jianping, Wang},
abstractNote = {It was demonstrated that Fe-N martensite ({alpha}') films were grown epitaxially on Fe(001) seeded GaAs(001) single crystal wafer by using a facing target sputtering method. X-ray diffraction pattern implies an increasing c lattice constant as the N concentration increases in the films. Partially ordered Fe{sub 16}N{sub 2} films were synthesized after in situ post-annealing the as-sputtered samples with pure Fe{sub 8}N phase. Multiple characterization techniques including XRD, XRR, TEM, and AES were used to determine the sample structure. The saturation magnetization of films with pure Fe{sub 8}N phase measured by VSM was evaluated in the range of 2.0-2.2 T. The post annealed films show systematic and dramatic increase on the saturation magnetization, which possess an average value of 2.6 T. These observations support the existence of giant saturation magnetization in {alpha}''-Fe{sub 16}N{sub 2} phase that is consistent with a recent proposed cluster-atom model and the first principles calculation [N. Ji, X. Q. Liu, and J. P. Wang, New J. Phys. 12 063032 (2010)].},
doi = {10.1063/1.3565403},
url = {https://www.osti.gov/biblio/21560113}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 7,
volume = 109,
place = {United States},
year = {2011},
month = {4}
}