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Title: Step-flow anisotropy of the m-plane GaN (1100) grown under nitrogen-rich conditions by plasma-assisted molecular beam epitaxy

Abstract

The homoepitaxial growth of m-plane (1100) GaN was investigated by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions. The surface morphologies as a function of sample miscut were studied, providing evidence for a strong growth anisotropy that is a consequence of the anisotropy of Ga adatom diffusion barriers on the m-plane surface recently calculated ab initio[Lymperakis and Neugebauer, Phys. Rev. B 79, 241308(R) (2009)]. We found that substrate miscut toward [0001] implies a step flow toward <1126> while substrate miscut toward [0001] causes formation of atomic steps either perpendicular or parallel to the [0001] direction, under N-rich conditions at 730 deg C. We describe the growth conditions for achieving atomically flat m-plane GaN layers with parallel atomic steps.

Authors:
; ;  [1]; ; ; ;  [1];  [1]
  1. Institute of High Pressure Physics, Polish Academy of Sciences, Sokolowska 29/37, PL-01-142 Warszawa (Poland)
Publication Date:
OSTI Identifier:
21544793
Resource Type:
Journal Article
Journal Name:
Physical Review. B, Condensed Matter and Materials Physics
Additional Journal Information:
Journal Volume: 83; Journal Issue: 24; Other Information: DOI: 10.1103/PhysRevB.83.245434; (c) 2011 American Institute of Physics; Journal ID: ISSN 1098-0121
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANISOTROPY; CRYSTAL GROWTH; DIFFUSION BARRIERS; GALLIUM NITRIDES; LAYERS; MOLECULAR BEAM EPITAXY; NITROGEN; PLASMA; SUBSTRATES; SURFACES; CRYSTAL GROWTH METHODS; ELEMENTS; EPITAXY; GALLIUM COMPOUNDS; NITRIDES; NITROGEN COMPOUNDS; NONMETALS; PNICTIDES

Citation Formats

Sawicka, Marta, Siekacz, Marcin, Skierbiszewski, Czeslaw, TopGaN Ltd., Sokolowska 29/37, PL-01-142 Warszawa, Turski, Henryk, Krysko, Marcin, DziePcielewski, Igor, Grzegory, Izabella, Smalc-Koziorowska, Julita, TopGaN Ltd., Sokolowska 29/37, PL-01-142 Warszawa, and Warsaw University of Technology, Faculty of Material Science and Engineering, Woloska 141, PL-02-507 Warszawa. Step-flow anisotropy of the m-plane GaN (1100) grown under nitrogen-rich conditions by plasma-assisted molecular beam epitaxy. United States: N. p., 2011. Web. doi:10.1103/PHYSREVB.83.245434.
Sawicka, Marta, Siekacz, Marcin, Skierbiszewski, Czeslaw, TopGaN Ltd., Sokolowska 29/37, PL-01-142 Warszawa, Turski, Henryk, Krysko, Marcin, DziePcielewski, Igor, Grzegory, Izabella, Smalc-Koziorowska, Julita, TopGaN Ltd., Sokolowska 29/37, PL-01-142 Warszawa, & Warsaw University of Technology, Faculty of Material Science and Engineering, Woloska 141, PL-02-507 Warszawa. Step-flow anisotropy of the m-plane GaN (1100) grown under nitrogen-rich conditions by plasma-assisted molecular beam epitaxy. United States. doi:10.1103/PHYSREVB.83.245434.
Sawicka, Marta, Siekacz, Marcin, Skierbiszewski, Czeslaw, TopGaN Ltd., Sokolowska 29/37, PL-01-142 Warszawa, Turski, Henryk, Krysko, Marcin, DziePcielewski, Igor, Grzegory, Izabella, Smalc-Koziorowska, Julita, TopGaN Ltd., Sokolowska 29/37, PL-01-142 Warszawa, and Warsaw University of Technology, Faculty of Material Science and Engineering, Woloska 141, PL-02-507 Warszawa. Wed . "Step-flow anisotropy of the m-plane GaN (1100) grown under nitrogen-rich conditions by plasma-assisted molecular beam epitaxy". United States. doi:10.1103/PHYSREVB.83.245434.
@article{osti_21544793,
title = {Step-flow anisotropy of the m-plane GaN (1100) grown under nitrogen-rich conditions by plasma-assisted molecular beam epitaxy},
author = {Sawicka, Marta and Siekacz, Marcin and Skierbiszewski, Czeslaw and TopGaN Ltd., Sokolowska 29/37, PL-01-142 Warszawa and Turski, Henryk and Krysko, Marcin and DziePcielewski, Igor and Grzegory, Izabella and Smalc-Koziorowska, Julita and TopGaN Ltd., Sokolowska 29/37, PL-01-142 Warszawa and Warsaw University of Technology, Faculty of Material Science and Engineering, Woloska 141, PL-02-507 Warszawa},
abstractNote = {The homoepitaxial growth of m-plane (1100) GaN was investigated by plasma-assisted molecular beam epitaxy under nitrogen-rich conditions. The surface morphologies as a function of sample miscut were studied, providing evidence for a strong growth anisotropy that is a consequence of the anisotropy of Ga adatom diffusion barriers on the m-plane surface recently calculated ab initio[Lymperakis and Neugebauer, Phys. Rev. B 79, 241308(R) (2009)]. We found that substrate miscut toward [0001] implies a step flow toward <1126> while substrate miscut toward [0001] causes formation of atomic steps either perpendicular or parallel to the [0001] direction, under N-rich conditions at 730 deg C. We describe the growth conditions for achieving atomically flat m-plane GaN layers with parallel atomic steps.},
doi = {10.1103/PHYSREVB.83.245434},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
issn = {1098-0121},
number = 24,
volume = 83,
place = {United States},
year = {2011},
month = {6}
}