Mn incorporation into the GaAs lattice investigated by hard x-ray photoelectron spectroscopy and diffraction
- Institute of Physics, Academy of Sciences of the Czech Republic, CZ-162 53 Prague 6 (Czech Republic)
- Charles University, Faculty of Mathematics and Physics, Department of Surface and Plasma Science, CZ-180 00 Prague 8 (Czech Republic)
- National Institute for Materials Science, SPring-8, Hyogo (Japan)
- Japan Synchrotron Radiation Research Institute, SPring-8, Hyogo (Japan)
Photoelectron spectroscopy and diffraction have been used to investigate structural changes during the annealing process of Ga{sub 1-x}Mn{sub x}As samples. Hard x-ray radiation helped in observing photoelectron core-level spectra and electron diffraction from the bulk underlying the oxidized surface layer. High electron-energy resolution enabled us to separate the components due to substitutional and interstitial Mn atoms in the intrinsic Mn 2p{sub 3/2} photoemission profile, resulting in two peaks at 638.8 and 639.5 eV binding energy, respectively. The peaks display the known characteristic behavior after annealing, that is, an almost complete reduction of the interstitial component and preservation of the substitutional component. In the photoelectron diffraction, a sensitivity of high-energy polar plots to the incorporation sites of photoemitting atoms into the atomic lattice has been shown. As a consequence, the experimental polar plots from substitutional and interstitial Mn atoms, which are supported theoretically, show characteristic features that provide structural information. From the similarities and differences of the polar plots for Mn and Ga, we have confirmed the assignment of components within the intrinsic part of the photoemission Mn 2p{sub 3/2} signal suggested by photoelectron spectroscopy.
- OSTI ID:
- 21544788
- Journal Information:
- Physical Review. B, Condensed Matter and Materials Physics, Vol. 83, Issue 23; Other Information: DOI: 10.1103/PhysRevB.83.235327; (c) 2011 American Institute of Physics; ISSN 1098-0121
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ALLOCATIONS
ANNEALING
ATOMS
BINDING ENERGY
CRYSTAL DEFECTS
ELECTRON DIFFRACTION
ELECTRONS
ENERGY RESOLUTION
GALLIUM ARSENIDES
HARD X RADIATION
INTERSTITIALS
LAYERS
MANGANESE COMPOUNDS
PHOTOELECTRON SPECTROSCOPY
PHOTOEMISSION
SENSITIVITY
SPECTRA
SURFACES
X-RAY DIFFRACTION
ARSENIC COMPOUNDS
ARSENIDES
COHERENT SCATTERING
CRYSTAL STRUCTURE
DIFFRACTION
ELECTROMAGNETIC RADIATION
ELECTRON SPECTROSCOPY
ELEMENTARY PARTICLES
EMISSION
ENERGY
FERMIONS
GALLIUM COMPOUNDS
HEAT TREATMENTS
IONIZING RADIATIONS
LEPTONS
PNICTIDES
POINT DEFECTS
RADIATIONS
RESOLUTION
SCATTERING
SECONDARY EMISSION
SPECTROSCOPY
TRANSITION ELEMENT COMPOUNDS
X RADIATION