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Title: Surface-site-selective study of valence electronic states of a clean Si(111)-7x7 surface using Si L{sub 23}VV Auger electron and Si 2p photoelectron coincidence measurements

Abstract

Valence electronic states of a clean Si(111)-7x7 surface are investigated in a surface-site-selective way using high-resolution coincidence measurements of Si pVV Auger electrons and Si 2p photoelectrons. The Si L{sub 23}VV Auger electron spectra measured in coincidence with energy-selected Si 2p photoelectrons show that the valence band at the highest density of states in the vicinity of the rest atoms is shifted by {approx}0.95 eV toward the Fermi level (E{sub F}) relative to that in the vicinity of the pedestal atoms (atoms directly bonded to the adatoms). The valence-band maximum in the vicinity of the rest atoms, on the other hand, is shown to be shifted by {approx}0.53 eV toward E{sub F} relative to that in the vicinity of the pedestal atoms. The Si 2p photoelectron spectra of Si(111)-7x7 measured in coincidence with energy-selected Si L{sub 23}VV Auger electrons identify the topmost surface components, and suggest that the dimers and the rest atoms are negatively charged while the pedestal atoms are positively charged. Furthermore, the Si 2p-Si L{sub 23}VV photoelectron Auger coincidence spectroscopy directly verifies that the adatom Si 2p component (usually denoted by C{sub 3}) is correlated with the surface state just below E{sub F} (usually denoted by S{submore » 1}), as has been observed in previous angle-resolved photoelectron spectroscopy studies.« less

Authors:
; ;  [1]; ; ;  [2];  [3]
  1. Department of Chemistry, Faculty of Science, Ehime University, 2-5 Bunkyo-cho, Matsuyama 790-8577 (Japan)
  2. Department of Physics, Faculty of Engineering, Yokohama National University, 79-5 Tokiwadai, Hodogaya-ku, Yokohama 240-8501 (Japan)
  3. Institute of Materials Structure Science, Japan's National Laboratory for High Energy Physics (KEK), 1-1 Oho, Tsukuba 305-0801 (Japan)
Publication Date:
OSTI Identifier:
21538062
Resource Type:
Journal Article
Journal Name:
Physical Review. B, Condensed Matter and Materials Physics
Additional Journal Information:
Journal Volume: 83; Journal Issue: 3; Other Information: DOI: 10.1103/PhysRevB.83.035320; (c) 2011 American Institute of Physics; Journal ID: ISSN 1098-0121
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATOMS; AUGER ELECTRON SPECTROSCOPY; DENSITY; DIMERS; ELECTRONS; FERMI LEVEL; PHOTOELECTRON SPECTROSCOPY; RESOLUTION; SILICON; SURFACES; VALENCE; ELECTRON SPECTROSCOPY; ELEMENTARY PARTICLES; ELEMENTS; ENERGY LEVELS; FERMIONS; LEPTONS; PHYSICAL PROPERTIES; SEMIMETALS; SPECTROSCOPY

Citation Formats

Kakiuchi, Takuhiro, Tahara, Masashi, Nagaoka, Shin-ichi, Hashimoto, Shogo, Fujita, Narihiko, Tanaka, Masatoshi, Mase, Kazuhiko, and The Graduate University for Advanced Studies, 1-1 Oho, Tsukuba 305-0801. Surface-site-selective study of valence electronic states of a clean Si(111)-7x7 surface using Si L{sub 23}VV Auger electron and Si 2p photoelectron coincidence measurements. United States: N. p., 2011. Web. doi:10.1103/PHYSREVB.83.035320.
Kakiuchi, Takuhiro, Tahara, Masashi, Nagaoka, Shin-ichi, Hashimoto, Shogo, Fujita, Narihiko, Tanaka, Masatoshi, Mase, Kazuhiko, & The Graduate University for Advanced Studies, 1-1 Oho, Tsukuba 305-0801. Surface-site-selective study of valence electronic states of a clean Si(111)-7x7 surface using Si L{sub 23}VV Auger electron and Si 2p photoelectron coincidence measurements. United States. doi:10.1103/PHYSREVB.83.035320.
Kakiuchi, Takuhiro, Tahara, Masashi, Nagaoka, Shin-ichi, Hashimoto, Shogo, Fujita, Narihiko, Tanaka, Masatoshi, Mase, Kazuhiko, and The Graduate University for Advanced Studies, 1-1 Oho, Tsukuba 305-0801. Sat . "Surface-site-selective study of valence electronic states of a clean Si(111)-7x7 surface using Si L{sub 23}VV Auger electron and Si 2p photoelectron coincidence measurements". United States. doi:10.1103/PHYSREVB.83.035320.
@article{osti_21538062,
title = {Surface-site-selective study of valence electronic states of a clean Si(111)-7x7 surface using Si L{sub 23}VV Auger electron and Si 2p photoelectron coincidence measurements},
author = {Kakiuchi, Takuhiro and Tahara, Masashi and Nagaoka, Shin-ichi and Hashimoto, Shogo and Fujita, Narihiko and Tanaka, Masatoshi and Mase, Kazuhiko and The Graduate University for Advanced Studies, 1-1 Oho, Tsukuba 305-0801},
abstractNote = {Valence electronic states of a clean Si(111)-7x7 surface are investigated in a surface-site-selective way using high-resolution coincidence measurements of Si pVV Auger electrons and Si 2p photoelectrons. The Si L{sub 23}VV Auger electron spectra measured in coincidence with energy-selected Si 2p photoelectrons show that the valence band at the highest density of states in the vicinity of the rest atoms is shifted by {approx}0.95 eV toward the Fermi level (E{sub F}) relative to that in the vicinity of the pedestal atoms (atoms directly bonded to the adatoms). The valence-band maximum in the vicinity of the rest atoms, on the other hand, is shown to be shifted by {approx}0.53 eV toward E{sub F} relative to that in the vicinity of the pedestal atoms. The Si 2p photoelectron spectra of Si(111)-7x7 measured in coincidence with energy-selected Si L{sub 23}VV Auger electrons identify the topmost surface components, and suggest that the dimers and the rest atoms are negatively charged while the pedestal atoms are positively charged. Furthermore, the Si 2p-Si L{sub 23}VV photoelectron Auger coincidence spectroscopy directly verifies that the adatom Si 2p component (usually denoted by C{sub 3}) is correlated with the surface state just below E{sub F} (usually denoted by S{sub 1}), as has been observed in previous angle-resolved photoelectron spectroscopy studies.},
doi = {10.1103/PHYSREVB.83.035320},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
issn = {1098-0121},
number = 3,
volume = 83,
place = {United States},
year = {2011},
month = {1}
}