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Title: Major deep levels with the same microstructures observed in n-type 4H-SiC and 6H-SiC

Abstract

Major deep levels observed in as-grown and irradiated n-type 4H-SiC and 6H-SiC epilayers have been investigated. After low-energy electron irradiation, by which only carbon atoms are displaced, five traps, EH1 (E{sub C}-0.36 eV), Z{sub 1}/Z{sub 2} (E{sub C}-0.65 eV), EH3 (E{sub C}-0.79 eV), EH5 (E{sub C}-1.0 eV), and EH6/7 (E{sub C}-1.48 eV), were detected in 4H-SiC and four traps, E{sub 1}/E{sub 2} (E{sub C}-0.45 eV), RD{sub 5} (E{sub C}-0.57 eV), ES (E{sub C}-0.80 eV), and R (E{sub C}-1.25 eV), were detected in 6H-SiC. The Z{sub 1}/Z{sub 2}, EH6/7 centers in 4H-SiC and the E{sub 1}/E{sub 2}, R centers in 6H-SiC exhibit common features as follows: their generation rates by the e{sup -}-irradiation were almost the same each other, their concentrations were not changed by heat treatments up to 1500 deg. C, and they showed very similar annealing behaviors at elevated temperatures. Furthermore, these defect centers were almost eliminated by thermal oxidation. Taking account of the observed results and the energy positions, the authors suggest that the Z{sub 1}/Z{sub 2} center in 4H-SiC corresponds to the E{sub 1}/E{sub 2} center in 6H-SiC, and the EH6/7 center in 4H-SiC to the R center in 6H-SiC, respectively. Since the concentrations of these fourmore » centers are almost the same for as-grown, electron-irradiated, annealed, and oxidized samples, these centers will contain a common intrinsic defect, most likely carbon vacancy. The authors also observed similar correspondence for other thermally unstable traps in 4H-SiC and 6H-SiC.« less

Authors:
; ; ; ;  [1]
  1. Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo, Kyoto 615-8510 (Japan)
Publication Date:
OSTI Identifier:
21538024
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 109; Journal Issue: 1; Other Information: DOI: 10.1063/1.3528124; (c) 2011 American Institute of Physics; Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; ACTIVATION ENERGY; ANNEALING; ATOMS; CARBON; CRYSTAL DEFECTS; ELECTRON BEAMS; ELECTRONS; EPITAXY; IRRADIATION; LAYERS; MICROSTRUCTURE; OXIDATION; PHYSICAL RADIATION EFFECTS; R CENTERS; SEMICONDUCTOR MATERIALS; SILICON CARBIDES; TRAPS; BEAMS; CARBIDES; CARBON COMPOUNDS; CHEMICAL REACTIONS; COLOR CENTERS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; ELEMENTARY PARTICLES; ELEMENTS; ENERGY; FERMIONS; HEAT TREATMENTS; LEPTON BEAMS; LEPTONS; MATERIALS; NONMETALS; PARTICLE BEAMS; POINT DEFECTS; RADIATION EFFECTS; SILICON COMPOUNDS; VACANCIES

Citation Formats

Sasaki, S, Kawahara, K, Feng, G, Alfieri, G, and Kimoto, T. Major deep levels with the same microstructures observed in n-type 4H-SiC and 6H-SiC. United States: N. p., 2011. Web. doi:10.1063/1.3528124.
Sasaki, S, Kawahara, K, Feng, G, Alfieri, G, & Kimoto, T. Major deep levels with the same microstructures observed in n-type 4H-SiC and 6H-SiC. United States. https://doi.org/10.1063/1.3528124
Sasaki, S, Kawahara, K, Feng, G, Alfieri, G, and Kimoto, T. 2011. "Major deep levels with the same microstructures observed in n-type 4H-SiC and 6H-SiC". United States. https://doi.org/10.1063/1.3528124.
@article{osti_21538024,
title = {Major deep levels with the same microstructures observed in n-type 4H-SiC and 6H-SiC},
author = {Sasaki, S and Kawahara, K and Feng, G and Alfieri, G and Kimoto, T},
abstractNote = {Major deep levels observed in as-grown and irradiated n-type 4H-SiC and 6H-SiC epilayers have been investigated. After low-energy electron irradiation, by which only carbon atoms are displaced, five traps, EH1 (E{sub C}-0.36 eV), Z{sub 1}/Z{sub 2} (E{sub C}-0.65 eV), EH3 (E{sub C}-0.79 eV), EH5 (E{sub C}-1.0 eV), and EH6/7 (E{sub C}-1.48 eV), were detected in 4H-SiC and four traps, E{sub 1}/E{sub 2} (E{sub C}-0.45 eV), RD{sub 5} (E{sub C}-0.57 eV), ES (E{sub C}-0.80 eV), and R (E{sub C}-1.25 eV), were detected in 6H-SiC. The Z{sub 1}/Z{sub 2}, EH6/7 centers in 4H-SiC and the E{sub 1}/E{sub 2}, R centers in 6H-SiC exhibit common features as follows: their generation rates by the e{sup -}-irradiation were almost the same each other, their concentrations were not changed by heat treatments up to 1500 deg. C, and they showed very similar annealing behaviors at elevated temperatures. Furthermore, these defect centers were almost eliminated by thermal oxidation. Taking account of the observed results and the energy positions, the authors suggest that the Z{sub 1}/Z{sub 2} center in 4H-SiC corresponds to the E{sub 1}/E{sub 2} center in 6H-SiC, and the EH6/7 center in 4H-SiC to the R center in 6H-SiC, respectively. Since the concentrations of these four centers are almost the same for as-grown, electron-irradiated, annealed, and oxidized samples, these centers will contain a common intrinsic defect, most likely carbon vacancy. The authors also observed similar correspondence for other thermally unstable traps in 4H-SiC and 6H-SiC.},
doi = {10.1063/1.3528124},
url = {https://www.osti.gov/biblio/21538024}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 1,
volume = 109,
place = {United States},
year = {Sat Jan 01 00:00:00 EST 2011},
month = {Sat Jan 01 00:00:00 EST 2011}
}