2-3 {mu}m mid infrared light sources using InGaAs/GaAsSb ''W'' type quantum wells on InP substrates

Journal Article · Mon Nov 15 00:00:00 EST 2010 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3506427· OSTI ID:21537919

Pan, C H; Lin, S D; Lee, C P ^[1]

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1. Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan (China)

We have investigated the InGaAs/GaAsSb/InAlGaAs/InAlAs type-II ''W'' quantum wells (QWs) grown on InP substrates by molecular beam epitaxy. The photoluminescence (PL) emission wavelength longer than 2.56 {mu}m at room temperature (RT) is demonstrated for the first time in this material system. The PL emission peaks of our designed samples can cover a wide range from 2 to 2.5 {mu}m at cryogenic temperature. The samples show good optical quality that the reduction in integrated PL intensity is only around one order of magnitude from 35 K to RT. We found that the integrated PL intensity decreased as the emission wavelength increased, which is due to the reduction in the electron-hole wave function overlap. This is consistent with the calculated result. In the power dependent PL measurements, the emission peak of ''W'' type QWs show blue shifts with the excitation power (P{sub ex}) but does not follow the P{sub ex}{sup 1/3} rule as predicted by type-II band bending model. The localized states filling effect gives reasonable explanations for the observed phenomena.

• OSTI ID: 21537919
• Journal Information: Journal of Applied Physics, Vol. 108, Issue 10; Other Information: DOI: 10.1063/1.3506427; (c) 2010 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
ALUMINIUM COMPOUNDS
ANTIMONY COMPOUNDS
EXCITATION
GALLIUM ARSENIDES
INDIUM ARSENIDES
INDIUM PHOSPHIDES
LIGHT SOURCES
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
QUANTUM WELLS
RECOMBINATION
REDUCTION
SEMICONDUCTOR MATERIALS
SPECTRAL SHIFT
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
WAVE FUNCTIONS
WAVELENGTHS
ARSENIC COMPOUNDS
ARSENIDES
CHEMICAL REACTIONS
CRYSTAL GROWTH METHODS
EMISSION
ENERGY-LEVEL TRANSITIONS
EPITAXY
FUNCTIONS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LUMINESCENCE
MATERIALS
NANOSTRUCTURES
PHOSPHIDES
PHOSPHORUS COMPOUNDS
PHOTON EMISSION
PNICTIDES
RADIATION SOURCES
TEMPERATURE RANGE