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Title: The improved oxidation resistance of Si-doped SmCo{sub 7} nanocrystalline magnet

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3602321· OSTI ID:21518495
;  [1]
  1. Key Laboratory of Aerospace Materials and Performance (Ministry of Education), School of Materials Science and Engineering, Beihang University, Beijing 100191 (China)

A drastic improvement in oxidation resistance of SmCo{sub 7} nanocrystalline magnet was achieved by alloying silicon at 500 deg. C. The maximum energy product (BH){sub max} loss of SmCo{sub 6.1}Si{sub 0.9} nanocrystalline magnet was about 5.6% after oxidation at 500 deg. C for 500 h, which was significantly less than 52.1% of SmCo{sub 7} nanocrystalline magnet. A general mode was proposed to predict the (BH){sub max} loss as a function of oxidation time at 500 deg. C. The formation of SiO{sub 2} oxide in the internal oxidation layer plays an important role in reducing the oxidation rate and oxygen diffusion coefficient, which leads to the enhancement of inherent oxidation resistance of SmCo{sub 6.1}Si{sub 0.9} nanocrystalline magnet.

OSTI ID:
21518495
Journal Information:
Applied Physics Letters, Vol. 98, Issue 25; Other Information: DOI: 10.1063/1.3602321; (c) 2011 American Institute of Physics; ISSN 0003-6951
Country of Publication:
United States
Language:
English