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Title: Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors

Abstract

High-quality wurtzite MgZnO film was deposited on Si(111) substrate via a delicate interface engineering using BeO, by which solar-blind ultraviolet photodetectors were fabricated on the n-MgZnO(0001)/p-Si(111) heterojunction. A thin Be layer was deposited on clean Si surface with subsequent in situ oxidation processes, which provides an excellent template for high-Mg-content MgZnO growth. The interface controlling significantly improves the device performance, as the photodetector demonstrates a sharp cutoff wavelength at 280 nm, consistent with the optical band gap of the epilayer. Our experimental results promise potential applications of this technique in integration of solar-blind ultraviolet optoelectronic device with Si microelectronic technologies.

Authors:
; ; ; ; ; ; ; ; ;  [1]
  1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190 (China)
Publication Date:
OSTI Identifier:
21518465
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 98; Journal Issue: 22; Other Information: DOI: 10.1063/1.3595342; (c) 2011 American Institute of Physics; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BERYLLIUM OXIDES; EQUIPMENT; FILMS; HETEROJUNCTIONS; INTERFACES; LAYERS; MAGNESIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; OXIDATION; PHOTODETECTORS; P-N JUNCTIONS; SEMICONDUCTOR MATERIALS; SILICON; SUBSTRATES; SURFACES; ULTRAVIOLET RADIATION; WAVELENGTHS; ZINC COMPOUNDS; ALKALINE EARTH METAL COMPOUNDS; BERYLLIUM COMPOUNDS; CHALCOGENIDES; CHEMICAL REACTIONS; CRYSTAL GROWTH METHODS; ELECTROMAGNETIC RADIATION; ELEMENTS; EPITAXY; MATERIALS; OXIDES; OXYGEN COMPOUNDS; RADIATIONS; SEMICONDUCTOR JUNCTIONS; SEMIMETALS

Citation Formats

Liang, H. L., Mei, Z. X., Zhang, Q. H., Gu, L., Liang, S., Hou, Y. N., Ye, D. Q., Gu, C. Z., Yu, R. C., and Du, X. L.. Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors. United States: N. p., 2011. Web. doi:10.1063/1.3595342.
Liang, H. L., Mei, Z. X., Zhang, Q. H., Gu, L., Liang, S., Hou, Y. N., Ye, D. Q., Gu, C. Z., Yu, R. C., & Du, X. L.. Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors. United States. doi:10.1063/1.3595342.
Liang, H. L., Mei, Z. X., Zhang, Q. H., Gu, L., Liang, S., Hou, Y. N., Ye, D. Q., Gu, C. Z., Yu, R. C., and Du, X. L.. Mon . "Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors". United States. doi:10.1063/1.3595342.
@article{osti_21518465,
title = {Interface engineering of high-Mg-content MgZnO/BeO/Si for p-n heterojunction solar-blind ultraviolet photodetectors},
author = {Liang, H. L. and Mei, Z. X. and Zhang, Q. H. and Gu, L. and Liang, S. and Hou, Y. N. and Ye, D. Q. and Gu, C. Z. and Yu, R. C. and Du, X. L.},
abstractNote = {High-quality wurtzite MgZnO film was deposited on Si(111) substrate via a delicate interface engineering using BeO, by which solar-blind ultraviolet photodetectors were fabricated on the n-MgZnO(0001)/p-Si(111) heterojunction. A thin Be layer was deposited on clean Si surface with subsequent in situ oxidation processes, which provides an excellent template for high-Mg-content MgZnO growth. The interface controlling significantly improves the device performance, as the photodetector demonstrates a sharp cutoff wavelength at 280 nm, consistent with the optical band gap of the epilayer. Our experimental results promise potential applications of this technique in integration of solar-blind ultraviolet optoelectronic device with Si microelectronic technologies.},
doi = {10.1063/1.3595342},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 22,
volume = 98,
place = {United States},
year = {2011},
month = {5}
}