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Title: Comparison between chemical vapor deposited and physical vapor deposited WSi{sub 2} metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors

Abstract

We compare chemical vapor deposition (CVD) and physical vapor deposition (PVD) WSi{sub 2} metal gate process for In{sub 0.53}Ga{sub 0.47}As n-metal-oxide-semiconductor field-effect transistors using 10 and 6.5 nm Al{sub 2}O{sub 3} as dielectric layer. The CVD-processed metal gate device with 6.5 nm Al{sub 2}O{sub 3} shows enhanced transistor performance such as drive current, maximum transconductance and maximum effective mobility. These values are relatively better than the PVD-processed counterpart device with improvement of 51.8%, 46.4%, and 47.8%, respectively. The improvement for the performance of the CVD-processed metal gate device is due to the fluorine passivation at the oxide/semiconductor interface and a nondestructive deposition process.

Authors:
;  [1]; ;  [2];  [1];  [1]
  1. Advanced Materials for Micro and Nano-Systems, Singapore-MIT Alliance, Singapore 637460 (Singapore)
  2. School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore)
Publication Date:
OSTI Identifier:
21518416
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 98; Journal Issue: 18; Other Information: DOI: 10.1063/1.3584024; (c) 2011 American Institute of Physics; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM OXIDES; CARRIER MOBILITY; CHEMICAL VAPOR DEPOSITION; COMPARATIVE EVALUATIONS; DIELECTRIC MATERIALS; FLUORINE; GALLIUM ARSENIDES; INDIUM ARSENIDES; INTERFACES; LAYERS; METALS; MOSFET; PASSIVATION; PHYSICAL VAPOR DEPOSITION; SEMICONDUCTOR MATERIALS; SILICON ALLOYS; THIN FILMS; TUNGSTEN ALLOYS; TUNGSTEN SILICIDES; VAPOR DEPOSITED COATINGS; ALLOYS; ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CHALCOGENIDES; CHEMICAL COATING; COATINGS; DEPOSITION; ELEMENTS; EVALUATION; FIELD EFFECT TRANSISTORS; FILMS; GALLIUM COMPOUNDS; HALOGENS; INDIUM COMPOUNDS; MATERIALS; MOBILITY; MOS TRANSISTORS; NONMETALS; OXIDES; OXYGEN COMPOUNDS; PNICTIDES; REFRACTORY METAL COMPOUNDS; SEMICONDUCTOR DEVICES; SILICIDES; SILICON COMPOUNDS; SURFACE COATING; TRANSISTORS; TRANSITION ELEMENT ALLOYS; TRANSITION ELEMENT COMPOUNDS; TUNGSTEN COMPOUNDS

Citation Formats

Ong, B S, Pey, K L, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Ong, C Y, Tan, C S, Antoniadis, D A, Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, Fitzgerald, E A, and Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139. Comparison between chemical vapor deposited and physical vapor deposited WSi{sub 2} metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors. United States: N. p., 2011. Web. doi:10.1063/1.3584024.
Ong, B S, Pey, K L, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Ong, C Y, Tan, C S, Antoniadis, D A, Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, Fitzgerald, E A, & Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139. Comparison between chemical vapor deposited and physical vapor deposited WSi{sub 2} metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors. United States. doi:10.1063/1.3584024.
Ong, B S, Pey, K L, School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Ong, C Y, Tan, C S, Antoniadis, D A, Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, Fitzgerald, E A, and Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139. Mon . "Comparison between chemical vapor deposited and physical vapor deposited WSi{sub 2} metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors". United States. doi:10.1063/1.3584024.
@article{osti_21518416,
title = {Comparison between chemical vapor deposited and physical vapor deposited WSi{sub 2} metal gate for InGaAs n-metal-oxide-semiconductor field-effect transistors},
author = {Ong, B S and Pey, K L and School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 and Ong, C Y and Tan, C S and Antoniadis, D A and Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139 and Fitzgerald, E A and Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139},
abstractNote = {We compare chemical vapor deposition (CVD) and physical vapor deposition (PVD) WSi{sub 2} metal gate process for In{sub 0.53}Ga{sub 0.47}As n-metal-oxide-semiconductor field-effect transistors using 10 and 6.5 nm Al{sub 2}O{sub 3} as dielectric layer. The CVD-processed metal gate device with 6.5 nm Al{sub 2}O{sub 3} shows enhanced transistor performance such as drive current, maximum transconductance and maximum effective mobility. These values are relatively better than the PVD-processed counterpart device with improvement of 51.8%, 46.4%, and 47.8%, respectively. The improvement for the performance of the CVD-processed metal gate device is due to the fluorine passivation at the oxide/semiconductor interface and a nondestructive deposition process.},
doi = {10.1063/1.3584024},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 18,
volume = 98,
place = {United States},
year = {2011},
month = {5}
}