Full band structure calculation of two-photon indirect absorption in bulk silicon

Journal Article · Mon Mar 28 00:00:00 EDT 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3570654· OSTI ID:21518348

Cheng, J L ^[1]; Rioux, J; Sipe, J E ^[1]

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1. Department of Physics, Institute for Optical Sciences, University of Toronto, 60 St. George Street, Toronto, Ontario M5S 1A7 (Canada)

Degenerate two-photon indirect absorption in silicon is an important limiting effect on the use of silicon structures for all-optical information processing at telecommunication wavelengths. We perform a full band structure calculation to investigate two-photon indirect absorption in bulk silicon, using a pseudopotential description of the energy bands and an adiabatic bond charge model to describe phonon dispersion and polarization. Our results agree well with some recent experimental results. The transverse acoustic/optical phonon-assisted processes dominate.

• OSTI ID: 21518348
• Journal Information: Applied Physics Letters, Vol. 98, Issue 13; Other Information: DOI: 10.1063/1.3570654; (c) 2011 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION
DISPERSIONS
NONLINEAR OPTICS
PHONONS
PHOTONS
POLARIZATION
PROCESSING
SILICON
WAVELENGTHS
BOSONS
ELEMENTARY PARTICLES
ELEMENTS
MASSLESS PARTICLES
OPTICS
QUASI PARTICLES
SEMIMETALS
SORPTION