skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Growth rate induced monoclinic to tetragonal phase transition in epitaxial BiFeO{sub 3} (001) thin films

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3561757· OSTI ID:21518314
 [1];  [2];  [3];  [1]
  1. Department of Materials Science and Engineering, National University of Singapore, Singapore 117574 (Singapore)
  2. Singapore Synchrotron Light Source (SSLS), National University of Singapore (NUS), 5 Research Link, Singapore 117603 (Singapore)
  3. Institute of Materials Research and Engineering, A-STAR (Agency for Science, Technology and Research), Singapore 117602 (Singapore)

Epitaxial BiFeO{sub 3} thin films were deposited on SrRuO{sub 3} buffered SrTiO{sub 3} (001) substrates at different growth rates by varying the radio frequency sputtering power. With increasing growth rate, the crystal structure of BiFeO{sub 3} films develops from monoclinic lattice to a mixture phase of tetragonal lattice T{sub 1} with c/a{approx}1.05 and giant tetragonal lattice T{sub 2} with c/a{approx}1.23, finally to a single tetragonal phase T{sub 2}, as shown by high resolution synchrotron x-ray diffraction reciprocal space mappings. The observed phase transitions, induced by film growth rate, offer an alternative strategy to manipulate crystalline phases in epitaxial ferroelectric thin films.

OSTI ID:
21518314
Journal Information:
Applied Physics Letters, Vol. 98, Issue 10; Other Information: DOI: 10.1063/1.3561757; (c) 2011 American Institute of Physics; ISSN 0003-6951
Country of Publication:
United States
Language:
English