A method to characterize the sheet resistance of a laser doped line on crystalline silicon wafers for photovoltaic applications

Journal Article · Mon Feb 28 00:00:00 EST 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3560056· OSTI ID:21518307

Wang, Kee Soon; Tjahjono, Budi S; Uddin, Ashraf; Wenham, Stuart R ^[1]

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1. ARC Photovoltaics Centre of Excellence, University of New South Wales, Sydney, New South Wales 2052 (Australia)

A theory is presented that correlates the different sheet resistance (R{sub sh}) values of the same phosphorus laser doped (LD) line approximated by two different methods: the LD box and transfer length measurement (TLM) methods. By modeling the LD line junction profile, an effective R{sub sh} value using the LD box method is obtained and used to derive the R{sub sh} upper limit (R{sub sh.UL}) of the LD line. This value matches within {+-}10% of the R{sub sh.UL} value obtained using the TLM method across four lasing speeds. Subsequently, a LD box method is introduced to determine the LD line R{sub sh.UL} easily without modeling work.

• OSTI ID: 21518307
• Journal Information: Applied Physics Letters, Vol. 98, Issue 9; Other Information: DOI: 10.1063/1.3560056; (c) 2011 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BEAMS
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
PHOSPHORUS
PHOTOVOLTAIC EFFECT
SEMICONDUCTOR LASERS
SEMICONDUCTOR MATERIALS
SHEETS
SILICON
SIMULATION
VELOCITY
ELECTRICAL PROPERTIES
ELEMENTS
LASERS
MATERIALS
NONMETALS
PHOTOELECTRIC EFFECT
PHYSICAL PROPERTIES
SEMICONDUCTOR DEVICES
SEMIMETALS
SOLID STATE LASERS