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Title: The effect of ZnO surface conditions on the electronic structure of the ZnO/CuPc interface

Abstract

The interfacial electronic structures of zinc oxide (ZnO)/copper-phthalocyanine (CuPc) were investigated by in situ x-ray and ultraviolet photoelectron spectroscopy (UPS) to determine the effects of air contamination on the ZnO substrate. UPS spectra showed that the 0.2 eV of the interface dipole is generated at the interface of the air exposed ZnO/CuPc while the interface of the annealed ZnO/CuPc generated -0.2 eV. In both cases, no band bending was observed. On the other hand, band bending at 0.3 eV and an interface dipole of 0.2 eV were observed at the interface of the sputter cleaned ZnO/CuPc. The energy offset between the conduction band maximum of ZnO and the highest occupied molecular orbital of CuPc was determined to be 0.6-0.7 eV for the contaminated ZnO interface while the offset was 1.0 eV for the cleaned ZnO interface. Contaminating moisture has little effect on the offset while the charge transfer was blocked and the offset was decreased in the presence of hydrocarbons.

Authors:
; ;  [1];  [2];  [3]; ;  [4]
  1. Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749 (Korea, Republic of)
  2. Division of Industrial Metrology, KRISS, Daejeon 305-340 (Korea, Republic of)
  3. Department of Physics, Boston University, 590 Commonwealth Avenue, Boston, Massachusetts 02215 (United States)
  4. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon 440-746 (Korea, Republic of)
Publication Date:
OSTI Identifier:
21518292
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 98; Journal Issue: 8; Other Information: DOI: 10.1063/1.3555440; (c) 2011 American Institute of Physics; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; CONTAMINATION; COPPER COMPOUNDS; DECONTAMINATION; DEPOSITION; ELECTRONIC STRUCTURE; HYDROCARBONS; INTERFACES; LAYERS; MOLECULAR ORBITAL METHOD; PHOTOELECTRON SPECTROSCOPY; PHTHALOCYANINES; SEMICONDUCTOR MATERIALS; SPECTRA; SPUTTERING; SUBSTRATES; SURFACES; ULTRAVIOLET RADIATION; X RADIATION; ZINC OXIDES; CALCULATION METHODS; CHALCOGENIDES; CLEANING; DYES; ELECTROMAGNETIC RADIATION; ELECTRON SPECTROSCOPY; HEAT TREATMENTS; HETEROCYCLIC COMPOUNDS; IONIZING RADIATIONS; MATERIALS; ORGANIC COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; RADIATIONS; SPECTROSCOPY; TRANSITION ELEMENT COMPOUNDS; ZINC COMPOUNDS

Citation Formats

Park, Sang Han, Kim, Hyo Jin, Cho, Mann-Ho, Yi, Yeonjin, Cho, Sang Wan, Yang, Jaehyun, and Kim, Hyoungsub. The effect of ZnO surface conditions on the electronic structure of the ZnO/CuPc interface. United States: N. p., 2011. Web. doi:10.1063/1.3555440.
Park, Sang Han, Kim, Hyo Jin, Cho, Mann-Ho, Yi, Yeonjin, Cho, Sang Wan, Yang, Jaehyun, & Kim, Hyoungsub. The effect of ZnO surface conditions on the electronic structure of the ZnO/CuPc interface. United States. doi:10.1063/1.3555440.
Park, Sang Han, Kim, Hyo Jin, Cho, Mann-Ho, Yi, Yeonjin, Cho, Sang Wan, Yang, Jaehyun, and Kim, Hyoungsub. Mon . "The effect of ZnO surface conditions on the electronic structure of the ZnO/CuPc interface". United States. doi:10.1063/1.3555440.
@article{osti_21518292,
title = {The effect of ZnO surface conditions on the electronic structure of the ZnO/CuPc interface},
author = {Park, Sang Han and Kim, Hyo Jin and Cho, Mann-Ho and Yi, Yeonjin and Cho, Sang Wan and Yang, Jaehyun and Kim, Hyoungsub},
abstractNote = {The interfacial electronic structures of zinc oxide (ZnO)/copper-phthalocyanine (CuPc) were investigated by in situ x-ray and ultraviolet photoelectron spectroscopy (UPS) to determine the effects of air contamination on the ZnO substrate. UPS spectra showed that the 0.2 eV of the interface dipole is generated at the interface of the air exposed ZnO/CuPc while the interface of the annealed ZnO/CuPc generated -0.2 eV. In both cases, no band bending was observed. On the other hand, band bending at 0.3 eV and an interface dipole of 0.2 eV were observed at the interface of the sputter cleaned ZnO/CuPc. The energy offset between the conduction band maximum of ZnO and the highest occupied molecular orbital of CuPc was determined to be 0.6-0.7 eV for the contaminated ZnO interface while the offset was 1.0 eV for the cleaned ZnO interface. Contaminating moisture has little effect on the offset while the charge transfer was blocked and the offset was decreased in the presence of hydrocarbons.},
doi = {10.1063/1.3555440},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 8,
volume = 98,
place = {United States},
year = {2011},
month = {2}
}