Nucleation and coalescence effects on the density of self-induced GaN nanowires grown by molecular beam epitaxy

Journal Article · Mon Feb 14 00:00:00 EST 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3555450· OSTI ID:21518285

Consonni, V; Knelangen, M; Trampert, A; Geelhaar, L; Riechert, H ^[1]

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1. Paul-Drude-Institute for Solid State Electronics, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

The evolution of the density of self-induced GaN nanowires as a function of the growth time, gallium rate, and growth temperature has been investigated by scanning and transmission electron microscopy. Nucleation and coalescence effects have been disentangled and quantified by distinguishing between single nanowires and nanowire clusters. Owing to the very specific nanowire nucleation mechanism involving a shape transition from spherical-cap-shaped islands, the nanowire density does not follow the standard island nucleation theory. Furthermore, the detrimental nanowire coalescence process can be significantly reduced by raising the growth temperature.

• OSTI ID: 21518285
• Journal Information: Applied Physics Letters, Vol. 98, Issue 7; Other Information: DOI: 10.1063/1.3555450; (c) 2011 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
BEAMS
COALESCENCE
DENSITY
GALLIUM NITRIDES
MOLECULAR BEAM EPITAXY
MOLECULAR STRUCTURE
NUCLEATION
QUANTUM WIRES
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
TRANSMISSION ELECTRON MICROSCOPY
CRYSTAL GROWTH METHODS
ELECTRON MICROSCOPY
EPITAXY
GALLIUM COMPOUNDS
MATERIALS
MICROSCOPY
NANOSTRUCTURES
NITRIDES
NITROGEN COMPOUNDS
PHYSICAL PROPERTIES
PNICTIDES