ZnO homojunction photodiodes based on Sb-doped p-type nanowire array and n-type film for ultraviolet detection

Journal Article · Mon Jan 24 00:00:00 EST 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3551628· OSTI ID:21518259

Guoping, Wang; Sheng, Chu; Ning, Zhan; Jianlin, Liu ^[1]; Yuqing, Lin; Chernyak, Leonid ^[2]

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1. Department of Electrical Engineering, Quantum Structures Laboratory, University of California at Riverside, Riverside, California 92521 (United States)
2. Department of Physics, University of Central Florida, Orlando, Florida 32816-2385 (United States)

ZnO p-n homojunctions based on Sb-doped p-type nanowire array and n-type film were grown by combining chemical vapor deposition (for nanowires) with molecular-beam epitaxy (for film). Indium tin oxide and Ti/Au were used as contacts to the ZnO nanowires and film, respectively. Characteristics of field-effect transistors using ZnO nanowires as channels indicate p-type conductivity of the nanowires. Electron beam induced current profiling confirmed the existence of ZnO p-n homojunction. Rectifying I-V characteristic showed a turn-on voltage of around 3 V. Very good response to ultraviolet light illumination was observed from photocurrent measurements.

• OSTI ID: 21518259
• Journal Information: Applied Physics Letters, Vol. 98, Issue 4; Other Information: DOI: 10.1063/1.3551628; (c) 2011 American Institute of Physics; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANTIMONY ADDITIONS
CHEMICAL VAPOR DEPOSITION
DETECTION
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRIC CONTACTS
FIELD EFFECT TRANSISTORS
ILLUMINANCE
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
PHOTOCONDUCTIVITY
PHOTOCURRENTS
PHOTODIODES
PHOTOEMISSION
P-N JUNCTIONS
QUANTUM WIRES
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
ULTRAVIOLET RADIATION
ZINC OXIDES
ALLOYS
ANTIMONY ALLOYS
CHALCOGENIDES
CHEMICAL COATING
CRYSTAL GROWTH METHODS
CURRENTS
DEPOSITION
ELECTRIC CURRENTS
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELECTROMAGNETIC RADIATION
ELECTRON MICROSCOPY
EMISSION
EPITAXY
EQUIPMENT
MATERIALS
MICROSCOPY
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
RADIATIONS
SECONDARY EMISSION
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SEMICONDUCTOR JUNCTIONS
SURFACE COATING
TRANSISTORS
ZINC COMPOUNDS