Measurement Of Hydrogen Capacities And Stability In Thin Films Of AlH Deposited By Magnetron Sputtering

Journal Article · Wed Jun 01 00:00:00 EDT 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3586086· OSTI ID:21513356

Dissanayake, A; AlFaify, S; Garratt, E; Nandasiri, M I; Taibu, R; Tecos, G; Kayani, A ^[1]; Hamdan, N M ^[2]

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1. Department of Physics, Western Michigan University, Kalamazoo MI 49008 (United States)
2. Department of Physics, American University of Sharjah, Sharjah (United Arab Emirates)

Thin, hydrogenated aluminum hydride films were deposited on silicon substrates using unbalanced magnetron (UBM) sputtering of a high purity aluminum target under electrically grounded conditions. Argon was used as sputtering gas and hydrogenation was carried out by diluting the growth plasma with hydrogen. The effect of hydrogen partial pressure on the final concentration of trapped elements including hydrogen has been studied using ion beam analysis (IBA) techniques. Moreover, in-situ thermal stability of trapped hydrogen in the film was carried out using Rutherford Backscattering Spectrometry (RBS), Non-Rutherford Backscattering Spectrometry (NRBS) and Elastic Recoil Detection Analysis (ERDA). Microstructure of the film was investigated by SEM analysis. Hydrogen content in the thin films was found decreasing as the films were heated above 110 deg. C in vacuum.

• OSTI ID: 21513356
• Journal Information: AIP Conference Proceedings, Vol. 1336, Issue 1; Conference: CAARI 2010: 21. International Conference on the Application of Accelerators in Research and Industry, Fort Worth, TX (United States), 8-13 Aug 2010; Other Information: DOI: 10.1063/1.3586086; (c) 2011 American Institute of Physics; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM
ALUMINIUM HYDRIDES
ARGON
CAPACITY
DETECTION
HYDROGEN
HYDROGENATION
ION BEAMS
MAGNETRONS
MICROSTRUCTURE
PARTIAL PRESSURE
PLASMA
RECOILS
RUTHERFORD BACKSCATTERING SPECTROSCOPY
SCANNING ELECTRON MICROSCOPY
SILICON
SPUTTERING
STABILITY
STOICHIOMETRY
SUBSTRATES
THIN FILMS
TRAPPING
ALUMINIUM COMPOUNDS
BEAMS
CHEMICAL REACTIONS
ELECTRON MICROSCOPY
ELECTRON TUBES
ELECTRONIC EQUIPMENT
ELEMENTS
EQUIPMENT
FILMS
FLUIDS
GASES
HYDRIDES
HYDROGEN COMPOUNDS
METALS
MICROSCOPY
MICROWAVE EQUIPMENT
MICROWAVE TUBES
NONMETALS
PHYSICAL PROPERTIES
RARE GASES
SEMIMETALS
SPECTROSCOPY
THERMODYNAMIC PROPERTIES