Ultra-violet Sensing Characteristic and Field Emission Properties of Vertically Aligned Aluminum Doped Zinc Oxide Nanorod Arrays

Journal Article · Wed May 25 00:00:00 EDT 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3587035· OSTI ID:21513237

Mamat, M H; Malek, M F; Musa, M Z ^[1]; Khusaimi, Z ^[2]; Rusop, M ^[3]

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1. NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA (UiTM), 40450 Shah Alam, Selangor (Malaysia)
2. NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA - UiTM, 40450 Shah Alam, Selangor (Malaysia)
3. NANO-ElecTronic Centre (NET), Faculty of Electrical Engineering, Universiti Teknologi MARA - UiTM, 40450 Shah Alam, Selangor (Malaysia) and NANO-SciTech Centre (NST), Institute of Science (IOS), Universiti Teknologi MARA - UiTM, 40450 Shah Alam, Selangor (Malaysia)

Ultra-violet (UV) sensing behavior and field emission characteristic have been investigated on vertically aligned aluminum (Al) doped zinc oxide (ZnO) nanorod arrays prepared using sol-gel immersion method. Uniform and high coverage density of ZnO nanorod arrays have been successfully deposited on seeded-catalyst coated substrates. The synthesized nanorods have diameter sizes between 50 nm to 150 nm. The XRD spectra show Al doped ZnO nanorod array has high crystallinity properties with the dominancy of crystal growth along (002) plane or c-axis. UV photoresponse measurement indicates that Al doped ZnO nanorod array sensitively detects UV light as shown by conductance increment after UV illumination exposure. The nanorod array shows good field emission properties with low turn on field and threshold field at 2.1 V/{mu}m and 5.6 V/{mu}m, respectively. The result suggested that Al doped ZnO nanorod arrays prepared by low-cost sol-gel immersion method show promising result towards fabrication of multi applications especially in UV photoconductive sensor and field emission displays.

• OSTI ID: 21513237
• Journal Information: AIP Conference Proceedings, Vol. 1341, Issue 1; Conference: Escinano2010: 2010 international conference on enabling science and nanotechnology, Kuala Lumpur (Malaysia), 1-3 Dec 2010; Other Information: DOI: 10.1063/1.3587035; (c) 2011 American Institute of Physics; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
ALUMINIUM ADDITIONS
ANNEALING
CATALYSTS
CRYSTAL GROWTH
DENSITY
DOPED MATERIALS
FIELD EMISSION
ILLUMINANCE
NANOSTRUCTURES
PROCESSING
SEMICONDUCTOR MATERIALS
SOL-GEL PROCESS
SPECTRA
SUBSTRATES
ULTRAVIOLET RADIATION
X-RAY DIFFRACTION
ZINC OXIDES
ALLOYS
ALUMINIUM ALLOYS
CHALCOGENIDES
COHERENT SCATTERING
DIFFRACTION
ELECTROMAGNETIC RADIATION
EMISSION
HEAT TREATMENTS
MATERIALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL PROPERTIES
RADIATIONS
SCATTERING
ZINC COMPOUNDS