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Title: Evaluation of surface damage on organic materials irradiated with Ar cluster ion beam

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.3548386· OSTI ID:21513139
;  [1]; ;  [2];  [1];  [3]
  1. Department of Nuclear Engineering, Kyoto University, Sakyo, Kyoto, 606-8501 (Japan)
  2. Quantum Science and Education Center, Gokasho, Uji, Kyoto, 611-0011 (Japan)
  3. Department of Electronic Science and Engineering, Kyoto University, Nishikyo, Kyoto, 615-8530 (Japan)

The sputtering yields of organic materials under large cluster ion bombardment are much higher than those under conventional monomer ion bombardment. The sputtering rate of arginine remains constant with fluence for an Ar cluster ion beam, but decreases with fluence for Ar monomer. Additionally, because Ar cluster etching induces little damage, Ar cluster ion can be used to achieve molecular depth profiling of organic materials. In this study, we evaluated the damage to poly methyl methacrylate (PMMA) and arginine samples irradiated with Ar atomic and Ar cluster ion beams. Arginine samples were analyzed by secondary ion mass spectrometry (SIMS) and PMMA samples were analyzed by X-ray photoelectron spectroscopy (XPS). The chemical structure of organic materials remained unchanged after Ar cluster irradiation, but was seriously damaged. These results indicated that bombardment with Ar cluster ions induced less surface damage than bombardment with Ar atomic ion. The damage layer thickness with 5 keV Ar cluster ion bombardment was less than 1 nm.

OSTI ID:
21513139
Journal Information:
AIP Conference Proceedings, Vol. 1321, Issue 1; Conference: IIT 2010: 18. international conference on ion implantation technology, Kyoto (Japan), 6-11 Jun 2010; Other Information: DOI: 10.1063/1.3548386; (c) 2010 American Institute of Physics; ISSN 0094-243X
Country of Publication:
United States
Language:
English