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Title: PIC-MCC Simulations of Capacitive RF Discharges for Plasma Etching

Abstract

A numerical study of parallel-plate rf discharges in Ar has been performed including the transport of ions and electrons in the sheath on the substrate. We employ a two-dimensional particle-in-cell with Monte Carlo collisions (PIC/MCC) method for an asymmetric capacitive discharge with an external electrical circuit containing a blocking capacitor and an rf power supply. The model gives self-consistently the dc self-bias voltages that usually occur on the rf-powered electrode, along with the energy and angular distribution of ion and electron fluxes incident on substrate surfaces. The peak electron density obtained in the discharge is 5.0x10{sup 8} cm{sup -3} at the Ar gas pressure of 20 mTorr, rf frequency of 13.56 MHz, and rf voltage of 100 V, where the dc self-bias voltage is determined to be -60 V. For the range of rf voltage (50-400 V) and frequency (13.56-40.68 MHz) examined, the peak electron density increases linearly with rf voltage and frequency squared. Higher rf frequency leads to larger distribution at lower incident angle of ions (more normal to the substrate surface), so that more desirable angular distribution is obtained.

Authors:
; ; ;  [1]
  1. Department of Aeronautics and Astronautics, Graduate School of Engineering, Kyoto University, Yoshida-Honmachi, Sakyo-ku, Kyoto 606-8501 (Japan)
Publication Date:
OSTI Identifier:
21511569
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1333; Journal Issue: 1; Conference: 27. international symposium on rarefied gas dynamics, Pacific Grove, CA (United States), 10-15 Jul 2010; Other Information: DOI: 10.1063/1.3562784; (c) 2011 American Institute of Physics; Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; 70 PLASMA PHYSICS AND FUSION TECHNOLOGY; ANGULAR DISTRIBUTION; ASYMMETRY; CAPACITORS; CHANNELING; COLLISIONS; ELECTRIC DISCHARGES; ELECTRIC POTENTIAL; ELECTRODES; ELECTRON DENSITY; ELECTRONS; ETCHING; IONS; MONTE CARLO METHOD; NUMERICAL ANALYSIS; PLASMA; SIMULATION; SUBSTRATES; SURFACES; TWO-DIMENSIONAL CALCULATIONS; CALCULATION METHODS; CHARGED PARTICLES; DISTRIBUTION; ELECTRICAL EQUIPMENT; ELEMENTARY PARTICLES; EQUIPMENT; FERMIONS; LEPTONS; MATHEMATICS; SURFACE FINISHING

Citation Formats

Takao, Yoshinori, Matsuoka, Kenji, Eriguchi, Koji, and Ono, Kouichi. PIC-MCC Simulations of Capacitive RF Discharges for Plasma Etching. United States: N. p., 2011. Web. doi:10.1063/1.3562784.
Takao, Yoshinori, Matsuoka, Kenji, Eriguchi, Koji, & Ono, Kouichi. PIC-MCC Simulations of Capacitive RF Discharges for Plasma Etching. United States. doi:10.1063/1.3562784.
Takao, Yoshinori, Matsuoka, Kenji, Eriguchi, Koji, and Ono, Kouichi. Fri . "PIC-MCC Simulations of Capacitive RF Discharges for Plasma Etching". United States. doi:10.1063/1.3562784.
@article{osti_21511569,
title = {PIC-MCC Simulations of Capacitive RF Discharges for Plasma Etching},
author = {Takao, Yoshinori and Matsuoka, Kenji and Eriguchi, Koji and Ono, Kouichi},
abstractNote = {A numerical study of parallel-plate rf discharges in Ar has been performed including the transport of ions and electrons in the sheath on the substrate. We employ a two-dimensional particle-in-cell with Monte Carlo collisions (PIC/MCC) method for an asymmetric capacitive discharge with an external electrical circuit containing a blocking capacitor and an rf power supply. The model gives self-consistently the dc self-bias voltages that usually occur on the rf-powered electrode, along with the energy and angular distribution of ion and electron fluxes incident on substrate surfaces. The peak electron density obtained in the discharge is 5.0x10{sup 8} cm{sup -3} at the Ar gas pressure of 20 mTorr, rf frequency of 13.56 MHz, and rf voltage of 100 V, where the dc self-bias voltage is determined to be -60 V. For the range of rf voltage (50-400 V) and frequency (13.56-40.68 MHz) examined, the peak electron density increases linearly with rf voltage and frequency squared. Higher rf frequency leads to larger distribution at lower incident angle of ions (more normal to the substrate surface), so that more desirable angular distribution is obtained.},
doi = {10.1063/1.3562784},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1333,
place = {United States},
year = {2011},
month = {5}
}