Physical and Electrical Characterization of 120 nm Technology Node Devices using PULSION registered Plasma Doping

Journal Article · Fri Jan 07 00:00:00 EST 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3548334· OSTI ID:21510095

Spiegel, Y; Torregrosa, F; Etienne, H; Felch, S B; Roux, L ^[1]; Roux, P; Figarols, F; Grosjean, C; Poupinet, S; Regnier, P; Delalleau, J; Maillot, P; Pizzuto, O ^[2]

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1. ION BEAM SERVICES, ZI Peynier-Rousset, rue Gaston Imbert Prolongee, 13790 Peynier (France)
2. STMicroelectronics, ZI Peynier-Rousset, 13790 Rousset (France)

Plasma doping is a well-known technology used in semiconductor manufacturing for two major DRAM manufacturing steps: polysilicon counter-doping and contact doping. For these specific applications, the PULSION tool shows physical benefits, as well as cost of ownership benefits, with the capability to perform low energy, high dose implantation in a high throughput mode. Nevertheless, throughput is a common challenge for all semiconductor manufacturing, not only for advanced technologies. The purpose of this study is to demonstrate that plasma doping is not limited to advanced devices, but can also satisfy the requirements of >90 nm nodes, for specific applications such as Lightly Doped Drain (LDD) implants.

• OSTI ID: 21510095
• Journal Information: AIP Conference Proceedings, Vol. 1321, Issue 1; Conference: IIT 2010: 18. international conference on ion implantation technology, Kyoto (Japan), 6-11 Jun 2010; Other Information: DOI: 10.1063/1.3548334; (c) 2010 American Institute of Physics; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
70 PLASMA PHYSICS AND FUSION TECHNOLOGY
DOPED MATERIALS
IMPLANTS
ION IMPLANTATION
MANUFACTURING
MASS SPECTROSCOPY
PLASMA
POLYCRYSTALS
RADIATION DOSES
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SILICON
SPUTTERING
CRYSTALS
DOSES
ELEMENTS
MATERIALS
SEMIMETALS
SPECTROSCOPY