Formation of Ultra-Shallow Junctions by Advanced Plasma Doping Techniques

Journal Article · Fri Jan 07 00:00:00 EST 2011 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.3548332· OSTI ID:21510094

Papasouliotis, G D; Godet, L; Singh, V; Miura, R; Ito, H ^[1]

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1. Varian Semiconductor Equipment Associates, 35 Dory Road, Gloucester, MA, 01930 (United States)

The fabrication of advanced CMOS devices calls for production worthy doping solutions to address requirements for increasingly shallow and abrupt junctions, while maintaining high dopant activation to meet series resistance requirements. Plasma Doping (PLAD), which has already been adopted in high volume manufacturing in the ultra high dose, low energy regime for advanced DRAM technology nodes, is now being investigated for source drain extension (SDE) implants, where precise and repeatable dopant placement is critical for maintaining control over device parameters. In this article, we investigate the process performance of SDE implants carried out in a VIISta registered PLAD system using p- type dopant precursors. Key metrics, such as junction depth, profile abruptness and sheet resistance are reported for as-implanted junctions, as well as samples processed with low thermal budget anneal techniques. Device performance data demonstrating the feasibility of the approach are presented. The advanced control features in the PLAD system are critical in enabling the process performance required for SDE implants.

• OSTI ID: 21510094
• Journal Information: AIP Conference Proceedings, Vol. 1321, Issue 1; Conference: IIT 2010: 18. international conference on ion implantation technology, Kyoto (Japan), 6-11 Jun 2010; Other Information: DOI: 10.1063/1.3548332; (c) 2010 American Institute of Physics; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
70 PLASMA PHYSICS AND FUSION TECHNOLOGY
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DEPTH
DOPED MATERIALS
ELECTRIC POTENTIAL
FABRICATION
IMPLANTS
MANUFACTURING
MASS SPECTROSCOPY
METRICS
MOS TRANSISTORS
PLASMA
RADIATION DOSES
SPUTTERING
TRANSMISSION ELECTRON MICROSCOPY
DIMENSIONS
DOSES
ELECTRON MICROSCOPY
MATERIALS
MICROSCOPY
SEMICONDUCTOR DEVICES
SPECTROSCOPY
TRANSISTORS