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Title: Growth Of Single Crystalline Copper Nanowhiskers

Journal Article · · AIP Conference Proceedings
DOI:https://doi.org/10.1063/1.3527143· OSTI ID:21506812
 [1];  [2]
  1. Institute for Materials Research, University of Stuttgart, Heisenbergstrasse 3, 70569 Stuttgart (Germany)
  2. Max Planck Institute for Metals Research, Heisenbergstrasse 3, 70569 Stuttgart (Germany)

Nanowhiskers are defect free single crystals with high aspect ratios and as result exhibit superior physical, e.g. mechanical properties. This paper sheds light on the kinetics of copper nanowhisker growth and thickening. Whisker growth was provoked by covering silicon wafers with a thin carbon film and subsequently coating them with copper by molecular beam epitaxy. The whiskers grown were examined by scanning electron microscopy and the length and diameter were measured as a function of the amount of copper deposited. The experiments show that nanowhisker growth follows Ruth and Hirth's growth model. A fit of the model parameters to the acquired data shows that adsorption of atoms on the substrate and on the whisker surface, with subsequent surface diffusion to the whisker tip, delivers by far the greatest portion of material for whisker growth. Additionally, the experiments demonstrate that the crystallographic orientation of the substrate surface greatly influences the growth rate in the early stage of whisker growth.

OSTI ID:
21506812
Journal Information:
AIP Conference Proceedings, Vol. 1300, Issue 1; Conference: 11. international workshop on stress-induced phenomena in metallization, Bad Schandau (Germany), 12-14 Apr 2010; Other Information: DOI: 10.1063/1.3527143; (c) 2010 American Institute of Physics; ISSN 0094-243X
Country of Publication:
United States
Language:
English