Electrode modification and fabrication by chemical vapor deposition of inorganic thin-films
- Univ. of Toledo, OH (United States); and others
A chemical vapor deposition method for the modification or fabrication of electrode materials has been developed. The method involves resistively heating an electrode substrate and passing a gas-phase precursor system over the hot substrate. Film deposition is uniform about the substrate with film thicknesses ranging from 1 to 15 pin depending on the substrate temperature, precursor concentration, gas flow rate and deposition time. We have utilized this method for the preparation of two types of electrodes. In the first case, metal mesh optically transparent electrodes have been modified with thin conducting films of either carbon, silicon carbide (SiC) and tin dioxide (SnO{sub 2}) from acetone, Si(CH{sub 3}){sub 4} and Sn(CH{sub 3}){sub 2}(O{sub 2}CCH{sub 3}){sub 2} precursor systems, respectively. The new electrodes exhibit an increase in the hydrogen overpotential by 500-600 mV relative to bare metal electrodes in acidic aqueous solution. In the second case, disk and ring-disk ultramicroelectrodes (UMEs) have been prepared by depositing insulating films of SiO{sub 2} on the cylindrical length of 10 {mu}m carbon fibers from SiCl{sub 4} or Si(OCH{sub 2}CH{sub 3}){sub 4} precursor systems. The new UMEs are highly reproducible and exhibit many advantages over UMEs made by other methods. Details of the preparation and electrochemical characterization of these electrodes will be presented.
- OSTI ID:
- 214944
- Report Number(s):
- CONF-950801-; TRN: 96:000922-0432
- Resource Relation:
- Conference: 210. national meeting of the American Chemical Society (ACS), Chicago, IL (United States), 20-25 Aug 1995; Other Information: PBD: 1995; Related Information: Is Part Of 210th ACS national meeting. Part 1 and 2; PB: 1866 p.
- Country of Publication:
- United States
- Language:
- English
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