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Title: Structural and electrical characteristics of high quality (100) orientated-Zn{sub 3}N{sub 2} thin films grown by radio-frequency magnetron sputtering

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3493208· OSTI ID:21476560
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  1. State Key Laboratory of Superhard Materials and Department of Physics, Jilin University, Changchun 130023 (China)
  2. Institute of Condensed Matter Physics, Jilin Normal University, Siping 136000 (China)

We report on highly crystalline zinc nitride (Zn{sub 3}N{sub 2}) thin films which were grown by rf magnetron sputtering on quartz substrates. The substrate temperature during growth is found to strongly affect the crystal quality of the thin films. The chemical bonding states were determined by x-ray photoelectron spectroscopy. Large chemical shifts in core-level N 1s peaks with binding energy of 396.4 eV were observed as compared to N 1s of free amine (398.8 eV), indicating Zn-N bond formation. Two N 1s states were found: one is N{sub 1} formed by Zn-N bonds and another is (N{sub 2}) produced by substitution of N molecules at N ion sites, which leads to larger lattice constants, consistent with x-ray diffraction results. Temperature-dependent Hall effect measurements of our Zn{sub 3}N{sub 2} films exhibited distinct conduction mechanisms at specific different temperature ranges.

OSTI ID:
21476560
Journal Information:
Journal of Applied Physics, Vol. 108, Issue 8; Other Information: DOI: 10.1063/1.3493208; (c) 2010 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English