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Title: Luminescence and creation of electron centers in UV-irradiated YAlO{sub 3} single crystals

Abstract

Luminescence and defect creation processes were studied by the photoluminescence, thermally stimulated luminescence, and electron paramagnetic resonance methods in the UV-irradiated single crystals of undoped YAlO{sub 3}, containing small amounts of Ce, Mo, and Ti ions as accidental impurities. The luminescence of the electron antisite Y{sub Al}{sup 2+}-type centers of different structures was found around 2.45 eV and studied at 4.2-500 K. The luminescence of the Ti{sup 3+}-related centers (2.03 and 1.73 eV) and Ti{sup 4+} centers (2.78 eV) was observed as well. Dependences of the number of the Y{sub Al}{sup 2+}-type and Ti{sup 3+}-related centers on the UV irradiation energy, temperature, and duration, as well as on various crystal heat-treatment procedures were examined. As a result of the photostimulated electron transfer from the O{sup 2-} ligand ions to Mo{sup 4+} and Ti{sup 4+} ions, the paramagnetic hole O{sup -}-type centers and electron Ti{sup 3+} and Mo{sup 3+} centers are created. The antisite Y{sub Al}{sup 2+}-type centers are created due to the photostimulated release of electrons mainly from the Mo{sup 3+} centers to the conduction band and their subsequent trapping at the Y{sub Al}{sup 3+} ions located near an oxygen vacancy or a defect at the neighboring Y{sup 3+} site.

Authors:
 [1]; ;  [2]; ;  [3]
  1. Institute of Solid State Physics, University of Latvia, Kengaraga 8, Riga, LV-1063 (Latvia)
  2. Institute of Physics, University of Tartu, Riia 142, 51014 Tartu (Estonia)
  3. Institute of Physics AS CR, Cukrovarnicka 10, 162 53 Prague (Czech Republic)
Publication Date:
OSTI Identifier:
21476446
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 108; Journal Issue: 5; Other Information: DOI: 10.1063/1.3459881; (c) 2010 American Institute of Physics; Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINATES; COLOR CENTERS; ELECTRON SPIN RESONANCE; EV RANGE; HEAT TREATMENTS; HOLES; IRRADIATION; MOLYBDENUM IONS; MONOCRYSTALS; OXYGEN IONS; PARAMAGNETISM; PHOTOLUMINESCENCE; THERMOLUMINESCENCE; TITANIUM IONS; TRAPPING; ULTRAVIOLET RADIATION; YTTRIUM COMPOUNDS; YTTRIUM IONS; ALUMINIUM COMPOUNDS; CHARGED PARTICLES; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; CRYSTALS; ELECTROMAGNETIC RADIATION; EMISSION; ENERGY RANGE; IONS; LUMINESCENCE; MAGNETIC RESONANCE; MAGNETISM; OXYGEN COMPOUNDS; PHOTON EMISSION; POINT DEFECTS; RADIATIONS; RESONANCE; TRANSITION ELEMENT COMPOUNDS; VACANCIES

Citation Formats

Grigorjeva, L, Krasnikov, A, Zazubovich, S, Laguta, V V, and Nikl, M. Luminescence and creation of electron centers in UV-irradiated YAlO{sub 3} single crystals. United States: N. p., 2010. Web. doi:10.1063/1.3459881.
Grigorjeva, L, Krasnikov, A, Zazubovich, S, Laguta, V V, & Nikl, M. Luminescence and creation of electron centers in UV-irradiated YAlO{sub 3} single crystals. United States. https://doi.org/10.1063/1.3459881
Grigorjeva, L, Krasnikov, A, Zazubovich, S, Laguta, V V, and Nikl, M. 2010. "Luminescence and creation of electron centers in UV-irradiated YAlO{sub 3} single crystals". United States. https://doi.org/10.1063/1.3459881.
@article{osti_21476446,
title = {Luminescence and creation of electron centers in UV-irradiated YAlO{sub 3} single crystals},
author = {Grigorjeva, L and Krasnikov, A and Zazubovich, S and Laguta, V V and Nikl, M},
abstractNote = {Luminescence and defect creation processes were studied by the photoluminescence, thermally stimulated luminescence, and electron paramagnetic resonance methods in the UV-irradiated single crystals of undoped YAlO{sub 3}, containing small amounts of Ce, Mo, and Ti ions as accidental impurities. The luminescence of the electron antisite Y{sub Al}{sup 2+}-type centers of different structures was found around 2.45 eV and studied at 4.2-500 K. The luminescence of the Ti{sup 3+}-related centers (2.03 and 1.73 eV) and Ti{sup 4+} centers (2.78 eV) was observed as well. Dependences of the number of the Y{sub Al}{sup 2+}-type and Ti{sup 3+}-related centers on the UV irradiation energy, temperature, and duration, as well as on various crystal heat-treatment procedures were examined. As a result of the photostimulated electron transfer from the O{sup 2-} ligand ions to Mo{sup 4+} and Ti{sup 4+} ions, the paramagnetic hole O{sup -}-type centers and electron Ti{sup 3+} and Mo{sup 3+} centers are created. The antisite Y{sub Al}{sup 2+}-type centers are created due to the photostimulated release of electrons mainly from the Mo{sup 3+} centers to the conduction band and their subsequent trapping at the Y{sub Al}{sup 3+} ions located near an oxygen vacancy or a defect at the neighboring Y{sup 3+} site.},
doi = {10.1063/1.3459881},
url = {https://www.osti.gov/biblio/21476446}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 5,
volume = 108,
place = {United States},
year = {Wed Sep 15 00:00:00 EDT 2010},
month = {Wed Sep 15 00:00:00 EDT 2010}
}