Temperature dependent transport properties of p-Pb{sub 1-x}Mn{sub x}Se films

Journal Article · Sun Aug 15 00:00:00 EDT 2010 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3478708· OSTI ID:21476429

Sun, Y H; Gao, K H; Chu, J H ^[1]; Lin, T; Dai, N ^[2]; Hu, Z G; Yang, P X ^[1]; Wu, H Z ^[3]

---

1. Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241 (China)
2. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China)
3. Department of Physics, Zhejiang University, Hangzhou 310027 (China)

Hall measurements are performed to survey electrical properties of p-Pb{sub 1-x}Mn{sub x}Se (x{approx_equal}0.04) films grown by molecular beam epitaxy technique. It is indicated that these films are approaching the metal-insulator transition from the metallic side. Weak localization effect was observed up to about 50 K. The deduced phase-breaking time {tau}{sub {phi}} on temperature is interpreted according to the concept of the electron-electron scattering in highly disordered bulk conductors.

• OSTI ID: 21476429
• Journal Information: Journal of Applied Physics, Vol. 108, Issue 4; Other Information: DOI: 10.1063/1.3478708; (c) 2010 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTAL GROWTH
ELECTRIC CONDUCTIVITY
ELECTRON-ELECTRON COLLISIONS
HALL EFFECT
LEAD SELENIDES
MAGNETIC SEMICONDUCTORS
MANGANESE COMPOUNDS
MOLECULAR BEAM EPITAXY
PHASE TRANSFORMATIONS
P-TYPE CONDUCTORS
TEMPERATURE DEPENDENCE
THIN FILMS
CHALCOGENIDES
COLLISIONS
CRYSTAL GROWTH METHODS
ELECTRICAL PROPERTIES
ELECTRON COLLISIONS
EPITAXY
FILMS
LEAD COMPOUNDS
MATERIALS
PHYSICAL PROPERTIES
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR MATERIALS
TRANSITION ELEMENT COMPOUNDS