Strong light-matter coupling in bulk GaN-microcavities with double dielectric mirrors fabricated by two different methods

Journal Article · Sun Aug 15 00:00:00 EDT 2010 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.3477450· OSTI ID:21476428

Reveret, F; Disseix, P; Vasson, A; Leymarie, J ^[1]; Bejtka, K ^[2]; Edwards, P R; Martin, R W ^[3]; Chenot, S; Sellers, I R; Duboz, J Y; Leroux, M; Semond, F ^[2]

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1. Clermont Universite, Universite Blaise Pascal, LASMEA, BP 10448, F-63000 Clermont-Ferrand (France)
2. CRHEA-CNRS, Rue Bernard Gregory, Parc Sophia Antipolis, 06560 Valbonne (France)
3. Department of Physics, SUPA, University of Strathclyde, Glasgow G4 0NG (United Kingdom)

Two routes for the fabrication of bulk GaN microcavities embedded between two dielectric mirrors are described, and the optical properties of the microcavities thus obtained are compared. In both cases, the GaN active layer is grown by molecular beam epitaxy on (111) Si, allowing use of selective etching to remove the substrate. In the first case, a three period Al{sub 0.2}Ga{sub 0.8}N/AlN Bragg mirror followed by a {lambda}/2 GaN cavity are grown directly on the Si. In the second case, a crack-free 2 {mu}m thick GaN layer is grown, and progressively thinned to a final thickness of {lambda}. Both devices work in the strong coupling regime at low temperature, as evidenced by angle-dependent reflectivity or transmission experiments. However, strong light-matter coupling in emission at room temperature is observed only for the second one. This is related to the poor optoelectronic quality of the active layer of the first device, due to its growth only 250 nm above the Si substrate and its related high defect density. The reflectivity spectra of the microcavities are well accounted for by using transfer matrix calculations.

• OSTI ID: 21476428
• Journal Information: Journal of Applied Physics, Vol. 108, Issue 4; Other Information: DOI: 10.1063/1.3477450; (c) 2010 American Institute of Physics; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM NITRIDES
COUPLING
CRACKS
CRYSTAL GROWTH
DIELECTRIC MATERIALS
ETCHING
GALLIUM NITRIDES
LAYERS
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
REFLECTIVITY
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES
VISIBLE RADIATION
ALUMINIUM COMPOUNDS
CRYSTAL GROWTH METHODS
ELECTROMAGNETIC RADIATION
ELEMENTS
EMISSION
EPITAXY
GALLIUM COMPOUNDS
LUMINESCENCE
MATERIALS
NITRIDES
NITROGEN COMPOUNDS
OPTICAL PROPERTIES
PHOTON EMISSION
PHYSICAL PROPERTIES
PNICTIDES
RADIATIONS
SEMIMETALS
SURFACE FINISHING
SURFACE PROPERTIES