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Title: Conduction noise absorption by ITO thin films attached to microstrip line utilizing Ohmic loss

Abstract

For the aim of wide-band noise absorbers with a special design for low frequency performance, this study proposes conductive indium-tin oxide (ITO) thin films as the absorbent materials in microstrip line. ITO thin films were deposited on the polyimide film substrates by rf magnetron cosputtering of In{sub 2}O{sub 3} and Sn targets. The deposited ITO films show a typical value of electrical resistivity ({approx}10{sup -4} {Omega} m) and sheet resistance can be controlled in the range of 20-230 {Omega} by variation in film thickness. Microstrip line with characteristic impedance of 50 {Omega} was used for determining their noise absorbing properties. It is found that there is an optimum sheet resistance of ITO films for the maximum power absorption. Reflection parameter (S{sub 11}) is increased with decrease in sheet resistance due to impedance mismatch. On the while, transmission parameter (S{sub 21}) is decreased with decrease in sheet resistance due to larger Ohmic loss of the ITO films. Experimental results and computational prediction show that the optimum sheet resistance is about 100 {Omega}. For this film, greater power absorption is predicted in the lower frequency region than ferrite thin films of high magnetic loss, which indicates that Ohmic loss is the predominantmore » loss parameter for power absorption in the low frequency range.« less

Authors:
;  [1]
  1. Department of Advanced Materials Engineering, Chungbuk National University, Cheongju 361-763 (Korea, Republic of)
Publication Date:
OSTI Identifier:
21476362
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 108; Journal Issue: 2; Other Information: DOI: 10.1063/1.3456515; (c) 2010 American Institute of Physics; Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; DEPOSITION; ELECTRIC CONDUCTIVITY; ENERGY ABSORPTION; ENERGY LOSSES; FREQUENCY DEPENDENCE; IMPEDANCE; INDIUM OXIDES; NOISE; ORGANIC POLYMERS; REFLECTION; SPUTTERING; SUBSTRATES; THIN FILMS; TIN OXIDES; CHALCOGENIDES; ELECTRICAL PROPERTIES; FILMS; INDIUM COMPOUNDS; LOSSES; ORGANIC COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; POLYMERS; SORPTION; TIN COMPOUNDS

Citation Formats

Kim, Sun-Hong, and Kim, Sung-Soo. Conduction noise absorption by ITO thin films attached to microstrip line utilizing Ohmic loss. United States: N. p., 2010. Web. doi:10.1063/1.3456515.
Kim, Sun-Hong, & Kim, Sung-Soo. Conduction noise absorption by ITO thin films attached to microstrip line utilizing Ohmic loss. United States. doi:10.1063/1.3456515.
Kim, Sun-Hong, and Kim, Sung-Soo. Thu . "Conduction noise absorption by ITO thin films attached to microstrip line utilizing Ohmic loss". United States. doi:10.1063/1.3456515.
@article{osti_21476362,
title = {Conduction noise absorption by ITO thin films attached to microstrip line utilizing Ohmic loss},
author = {Kim, Sun-Hong and Kim, Sung-Soo},
abstractNote = {For the aim of wide-band noise absorbers with a special design for low frequency performance, this study proposes conductive indium-tin oxide (ITO) thin films as the absorbent materials in microstrip line. ITO thin films were deposited on the polyimide film substrates by rf magnetron cosputtering of In{sub 2}O{sub 3} and Sn targets. The deposited ITO films show a typical value of electrical resistivity ({approx}10{sup -4} {Omega} m) and sheet resistance can be controlled in the range of 20-230 {Omega} by variation in film thickness. Microstrip line with characteristic impedance of 50 {Omega} was used for determining their noise absorbing properties. It is found that there is an optimum sheet resistance of ITO films for the maximum power absorption. Reflection parameter (S{sub 11}) is increased with decrease in sheet resistance due to impedance mismatch. On the while, transmission parameter (S{sub 21}) is decreased with decrease in sheet resistance due to larger Ohmic loss of the ITO films. Experimental results and computational prediction show that the optimum sheet resistance is about 100 {Omega}. For this film, greater power absorption is predicted in the lower frequency region than ferrite thin films of high magnetic loss, which indicates that Ohmic loss is the predominant loss parameter for power absorption in the low frequency range.},
doi = {10.1063/1.3456515},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 2,
volume = 108,
place = {United States},
year = {2010},
month = {7}
}