Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well
Abstract
The relaxation of lattice-mismatched strain by deep postetching was systematically investigated for InGaN/GaN multiple quantum wells (MQWs). A planar heterojunction wafer, which included an In{sub 0.21}Ga{sub 0.79}N (3.2 nm)/GaN (14.8 nm) MQW, was etched by inductively coupled plasma dry etching, to fabricate high-density nanopillar, nanostripe, and nanohole arrays. The etching depth was 570 nm for all nanostructures. The diameter of the nanopillars was varied from 50 to 300 nm, then the mesa stripe width of the nanostripes and the diameter of the nanoholes were varied from 100 nm to 440 nm and 50 nm to 310 nm, respectively. The effect of strain relaxation on various optical properties was investigated. For example, in an array of nanopillars with diameter 130 nm and interval 250 nm, a large blueshift in the photoluminescence (PL) emission peak from 510 nm (as-grown) to 459 nm occurred at room temperature (RT). PL internal quantum efficiency (defined by the ratio of PL integral intensity at 300 K to that at 4.2 K) was enhanced from 34% (as-grown) to 60%, and the PL decay time at 4.2 K was reduced from 22 ns (as-grown) to 4.2 ns. These results clearly indicate the reduction of lattice-mismatched strain by postetching,more »
- Authors:
-
- Department of Electrical and Electronics Engineering, Sophia University, Tokyo 102-8554, Japan and Nano-technology Research Center, Sophia University, Tokyo 102-8554 (Japan)
- CREST, JST, Saitama 332-0012 (Japan)
- Publication Date:
- OSTI Identifier:
- 21476296
- Resource Type:
- Journal Article
- Journal Name:
- Journal of Applied Physics
- Additional Journal Information:
- Journal Volume: 107; Journal Issue: 11; Other Information: DOI: 10.1063/1.3369434; (c) 2010 American Institute of Physics; Journal ID: ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
- Subject:
- 77 NANOSCIENCE AND NANOTECHNOLOGY; 36 MATERIALS SCIENCE; CRYSTAL LATTICES; ETCHING; GALLIUM NITRIDES; HETEROJUNCTIONS; INDIUM COMPOUNDS; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; PLASMA; QUANTUM EFFICIENCY; QUANTUM WELLS; RECOMBINATION; SEMICONDUCTOR MATERIALS; SPECTRAL SHIFT; SPUTTERING; STRESS RELAXATION; SURFACES; TEXTURE; CRYSTAL STRUCTURE; EFFICIENCY; EMISSION; GALLIUM COMPOUNDS; LUMINESCENCE; MATERIALS; NANOSTRUCTURES; NITRIDES; NITROGEN COMPOUNDS; PHOTON EMISSION; PHYSICAL PROPERTIES; PNICTIDES; RELAXATION; SEMICONDUCTOR JUNCTIONS; SURFACE FINISHING
Citation Formats
Ramesh, V, Kikuchi, A, Kishino, K, CREST, JST, Saitama 332-0012, Funato, M, Kawakami, Y, and Department of Electronics Science and Engineering, Kyoto University, Kyoto 615-8510. Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well. United States: N. p., 2010.
Web. doi:10.1063/1.3369434.
Ramesh, V, Kikuchi, A, Kishino, K, CREST, JST, Saitama 332-0012, Funato, M, Kawakami, Y, & Department of Electronics Science and Engineering, Kyoto University, Kyoto 615-8510. Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well. United States. https://doi.org/10.1063/1.3369434
Ramesh, V, Kikuchi, A, Kishino, K, CREST, JST, Saitama 332-0012, Funato, M, Kawakami, Y, and Department of Electronics Science and Engineering, Kyoto University, Kyoto 615-8510. 2010.
"Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well". United States. https://doi.org/10.1063/1.3369434.
@article{osti_21476296,
title = {Strain relaxation effect by nanotexturing InGaN/GaN multiple quantum well},
author = {Ramesh, V and Kikuchi, A and Kishino, K and CREST, JST, Saitama 332-0012 and Funato, M and Kawakami, Y and Department of Electronics Science and Engineering, Kyoto University, Kyoto 615-8510},
abstractNote = {The relaxation of lattice-mismatched strain by deep postetching was systematically investigated for InGaN/GaN multiple quantum wells (MQWs). A planar heterojunction wafer, which included an In{sub 0.21}Ga{sub 0.79}N (3.2 nm)/GaN (14.8 nm) MQW, was etched by inductively coupled plasma dry etching, to fabricate high-density nanopillar, nanostripe, and nanohole arrays. The etching depth was 570 nm for all nanostructures. The diameter of the nanopillars was varied from 50 to 300 nm, then the mesa stripe width of the nanostripes and the diameter of the nanoholes were varied from 100 nm to 440 nm and 50 nm to 310 nm, respectively. The effect of strain relaxation on various optical properties was investigated. For example, in an array of nanopillars with diameter 130 nm and interval 250 nm, a large blueshift in the photoluminescence (PL) emission peak from 510 nm (as-grown) to 459 nm occurred at room temperature (RT). PL internal quantum efficiency (defined by the ratio of PL integral intensity at 300 K to that at 4.2 K) was enhanced from 34% (as-grown) to 60%, and the PL decay time at 4.2 K was reduced from 22 ns (as-grown) to 4.2 ns. These results clearly indicate the reduction of lattice-mismatched strain by postetching, which enhanced strain reduction with decreasing nanopillar diameter down to a diameter of 130 nm, where the strain reduction became saturated. The dependence of RT-PL decay time on nanopillar diameter was measured, and the surface nonradiative recombination velocity was estimated to be 5.8x10{sup 2} cm/s. This relatively slow rate indicates a little etching damage.},
doi = {10.1063/1.3369434},
url = {https://www.osti.gov/biblio/21476296},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 11,
volume = 107,
place = {United States},
year = {Tue Jun 15 00:00:00 EDT 2010},
month = {Tue Jun 15 00:00:00 EDT 2010}
}