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Title: Effect of deposition temperature of TiO{sub 2} on the piezoelectric property of PbTiO{sub 3} film grown by PbO gas phase reaction sputtering

Abstract

A 17 nm thick PbTiO{sub 3} (PTO) films were fabricated via PbO gas phase reaction with TiO{sub 2} starting layer in a sputtering chamber. The influence of deposition temperature of TiO{sub 2} on the piezoelectric properties of PTO thin films was investigated. The remnant piezoresponse of PTO films nonlinearly increased as a function of TiO{sub 2} deposition temperature, which is correlated with the increase in average grain diameter of PTO film. As grain size increases, the restriction on remnant piezoresponse imposed by the grain boundary via coupling between local strain and polarization becomes less pronounced, which results in the increase in remnant piezoresponse. Furthermore, we found that the vertical shift in piezoresponse hysteresis loops is closely related to the residual stress state. A strong correlation between the negative vertical shift and the residual tensile stress reveals that residual stress on the resulting PTO film contributed to the asymmetric piezoelectric property.

Authors:
; ; ;  [1];  [2];  [3];  [4]
  1. Department of Materials Science and Engineering, KAIST, Daejeon 305-701 (Korea, Republic of)
  2. Materials Science Division, Argonne National Laboratory, Lemont, Illinois 60439 (United States)
  3. Physics, Imperial College, London SW7 2AZ (United Kingdom)
  4. Semiconductor R and D Center, Samsung Electronics Co., Yongin 446-711 (Korea, Republic of)
Publication Date:
OSTI Identifier:
21476265
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 107; Journal Issue: 10; Other Information: DOI: 10.1063/1.3406148; (c) 2010 American Institute of Physics; Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CORRELATIONS; COUPLING; DEPOSITION; DIELECTRIC MATERIALS; GRAIN BOUNDARIES; GRAIN SIZE; HYSTERESIS; LAYERS; LEAD OXIDES; NANOSTRUCTURES; PIEZOELECTRICITY; POLARIZATION; RESIDUAL STRESSES; SPUTTERING; STRAINS; THIN FILMS; TITANATES; TITANIUM OXIDES; CHALCOGENIDES; ELECTRICITY; FILMS; LEAD COMPOUNDS; MATERIALS; MICROSTRUCTURE; OXIDES; OXYGEN COMPOUNDS; SIZE; STRESSES; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS

Citation Formats

Kim, Jiyoon, Kim, Yunseok, Park, Moonkyu, No, Kwangsoo, Hong, Seungbum, Buehlmann, Simon, and Kim, Yong Kwan. Effect of deposition temperature of TiO{sub 2} on the piezoelectric property of PbTiO{sub 3} film grown by PbO gas phase reaction sputtering. United States: N. p., 2010. Web. doi:10.1063/1.3406148.
Kim, Jiyoon, Kim, Yunseok, Park, Moonkyu, No, Kwangsoo, Hong, Seungbum, Buehlmann, Simon, & Kim, Yong Kwan. Effect of deposition temperature of TiO{sub 2} on the piezoelectric property of PbTiO{sub 3} film grown by PbO gas phase reaction sputtering. United States. https://doi.org/10.1063/1.3406148
Kim, Jiyoon, Kim, Yunseok, Park, Moonkyu, No, Kwangsoo, Hong, Seungbum, Buehlmann, Simon, and Kim, Yong Kwan. 2010. "Effect of deposition temperature of TiO{sub 2} on the piezoelectric property of PbTiO{sub 3} film grown by PbO gas phase reaction sputtering". United States. https://doi.org/10.1063/1.3406148.
@article{osti_21476265,
title = {Effect of deposition temperature of TiO{sub 2} on the piezoelectric property of PbTiO{sub 3} film grown by PbO gas phase reaction sputtering},
author = {Kim, Jiyoon and Kim, Yunseok and Park, Moonkyu and No, Kwangsoo and Hong, Seungbum and Buehlmann, Simon and Kim, Yong Kwan},
abstractNote = {A 17 nm thick PbTiO{sub 3} (PTO) films were fabricated via PbO gas phase reaction with TiO{sub 2} starting layer in a sputtering chamber. The influence of deposition temperature of TiO{sub 2} on the piezoelectric properties of PTO thin films was investigated. The remnant piezoresponse of PTO films nonlinearly increased as a function of TiO{sub 2} deposition temperature, which is correlated with the increase in average grain diameter of PTO film. As grain size increases, the restriction on remnant piezoresponse imposed by the grain boundary via coupling between local strain and polarization becomes less pronounced, which results in the increase in remnant piezoresponse. Furthermore, we found that the vertical shift in piezoresponse hysteresis loops is closely related to the residual stress state. A strong correlation between the negative vertical shift and the residual tensile stress reveals that residual stress on the resulting PTO film contributed to the asymmetric piezoelectric property.},
doi = {10.1063/1.3406148},
url = {https://www.osti.gov/biblio/21476265}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 10,
volume = 107,
place = {United States},
year = {2010},
month = {5}
}