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Title: Growth and magnetic property of {zeta}-phase Mn{sub 2}N{sub 1{+-}x} thin films by plasma-assisted molecular beam epitaxy

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3386516· OSTI ID:21476258
; ; ;  [1];  [2]
  1. State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-sen University, Guangzhou 510275 (China)
  2. School of Science, Guilin University of Technology, Guilin 541004 (China)

{zeta}-phase manganese nitride films were directly grown on sapphire substrates using plasma-assisted molecular beam epitaxy. Mn{sub 2}N{sub 1.06}, Mn{sub 2}N{sub 0.98}, and Mn{sub 2}N{sub 0.86} films were synthesized by controlling the temperature of the effusion cell filled with highly pure manganese powder. The composition, structure, and morphology of the films were identified by x-ray photoelectron spectroscopy, x-ray diffraction and atomic force microscopy, and the magnetic properties of the films were characterized by a superconducting quantum interference device magnetometer at 5 and 300 K. The magnetic measurements reveal that Mn{sub 2}N{sub 1{+-}x} exhibits weak ferromagnetism at 5 K, which is mainly ascribed to the weak interaction among the Mn cations induced by the nitrogen vacancies. Furthermore, the Mn{sub 2}N{sub 0.86} single-crystalline films are found to have room-temperature ferromagnetism, which is attributed to the strain of the Mn{sub 2}N{sub 0.86} films raised from lattice mismatch between the Mn{sub 2}N{sub 0.86} films and the substrates.

OSTI ID:
21476258
Journal Information:
Journal of Applied Physics, Vol. 107, Issue 10; Other Information: DOI: 10.1063/1.3386516; (c) 2010 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English

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