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Title: Growth kinetics and electronic properties of unintentionally doped semi-insulating GaN on SiC and high-resistivity GaN on sapphire grown by ammonia molecular-beam epitaxy

Abstract

Growth of unintentionally doped (UID) semi-insulating GaN on SiC and highly resistive GaN on sapphire using the ammonia molecular-beam epitaxy technique is reported. The semi-insulating UID GaN on SiC shows room temperature (RT) resistivity of 10{sup 11} {Omega} cm and well defined activation energy of 1.0 eV. The balance of compensation of unintentional donors and acceptors is such that the Fermi level is lowered to midgap, and controlled by a 1.0 eV deep level defect, which is thought to be related to the nitrogen antisite N{sub Ga}, similar to the ''EL2'' center (arsenic antisite) in unintentionally doped semi-insulating GaAs. The highly resistive GaN on sapphire shows RT resistivity in range of 10{sup 6}-10{sup 9} {Omega} cm and activation energy varying from 0.25 to 0.9 eV. In this case, the compensation of shallow donors is incomplete, and the Fermi level is controlled by levels shallower than the 1.0 eV deep centers. The growth mechanisms for the resistive UID GaN materials were investigated by experimental studies of the surface kinetics during growth. The required growth regime involves a moderate growth temperature range of 740-780 deg. C, and a high ammonia flux (beam equivalent pressure of 1x10{sup -4} Torr), which ensures supersaturated coveragemore » of surface adsorption sites with NH{sub x} radicals. Such highly nitrogen rich growth conditions lead to two-dimensional layer by layer growth and reduced oxygen incorporation.« less

Authors:
; ; ;  [1];  [2]
  1. Institute for Microstructural Sciences, National Research Council Canada, Ottawa, Ontario K1A 0R6 (Canada)
  2. Semiconductor Research Center, Wright State University, Dayton, Ohio 45435 (United States)
Publication Date:
OSTI Identifier:
21476252
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 107; Journal Issue: 10; Other Information: DOI: 10.1063/1.3415527; (c) 2010 American Institute of Physics; Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ACTIVATION ENERGY; ADSORPTION; AMMONIA; CRYSTAL GROWTH; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; EV RANGE; FERMI LEVEL; GALLIUM ARSENIDES; GALLIUM NITRIDES; LAYERS; MOLECULAR BEAM EPITAXY; RADICALS; SAPPHIRE; SEMICONDUCTOR MATERIALS; SILICON CARBIDES; SURFACES; TEMPERATURE RANGE 0273-0400 K; ARSENIC COMPOUNDS; ARSENIDES; CARBIDES; CARBON COMPOUNDS; CORUNDUM; CRYSTAL GROWTH METHODS; ELECTRICAL PROPERTIES; ENERGY; ENERGY LEVELS; ENERGY RANGE; EPITAXY; GALLIUM COMPOUNDS; HYDRIDES; HYDROGEN COMPOUNDS; MATERIALS; MINERALS; NITRIDES; NITROGEN COMPOUNDS; NITROGEN HYDRIDES; OXIDE MINERALS; PHYSICAL PROPERTIES; PNICTIDES; SILICON COMPOUNDS; SORPTION; TEMPERATURE RANGE

Citation Formats

Tang, H, Rolfe, S, Bardwell, J A, Raymond, S, and Fang, Z Q. Growth kinetics and electronic properties of unintentionally doped semi-insulating GaN on SiC and high-resistivity GaN on sapphire grown by ammonia molecular-beam epitaxy. United States: N. p., 2010. Web. doi:10.1063/1.3415527.
Tang, H, Rolfe, S, Bardwell, J A, Raymond, S, & Fang, Z Q. Growth kinetics and electronic properties of unintentionally doped semi-insulating GaN on SiC and high-resistivity GaN on sapphire grown by ammonia molecular-beam epitaxy. United States. https://doi.org/10.1063/1.3415527
Tang, H, Rolfe, S, Bardwell, J A, Raymond, S, and Fang, Z Q. Sat . "Growth kinetics and electronic properties of unintentionally doped semi-insulating GaN on SiC and high-resistivity GaN on sapphire grown by ammonia molecular-beam epitaxy". United States. https://doi.org/10.1063/1.3415527.
@article{osti_21476252,
title = {Growth kinetics and electronic properties of unintentionally doped semi-insulating GaN on SiC and high-resistivity GaN on sapphire grown by ammonia molecular-beam epitaxy},
author = {Tang, H and Rolfe, S and Bardwell, J A and Raymond, S and Fang, Z Q},
abstractNote = {Growth of unintentionally doped (UID) semi-insulating GaN on SiC and highly resistive GaN on sapphire using the ammonia molecular-beam epitaxy technique is reported. The semi-insulating UID GaN on SiC shows room temperature (RT) resistivity of 10{sup 11} {Omega} cm and well defined activation energy of 1.0 eV. The balance of compensation of unintentional donors and acceptors is such that the Fermi level is lowered to midgap, and controlled by a 1.0 eV deep level defect, which is thought to be related to the nitrogen antisite N{sub Ga}, similar to the ''EL2'' center (arsenic antisite) in unintentionally doped semi-insulating GaAs. The highly resistive GaN on sapphire shows RT resistivity in range of 10{sup 6}-10{sup 9} {Omega} cm and activation energy varying from 0.25 to 0.9 eV. In this case, the compensation of shallow donors is incomplete, and the Fermi level is controlled by levels shallower than the 1.0 eV deep centers. The growth mechanisms for the resistive UID GaN materials were investigated by experimental studies of the surface kinetics during growth. The required growth regime involves a moderate growth temperature range of 740-780 deg. C, and a high ammonia flux (beam equivalent pressure of 1x10{sup -4} Torr), which ensures supersaturated coverage of surface adsorption sites with NH{sub x} radicals. Such highly nitrogen rich growth conditions lead to two-dimensional layer by layer growth and reduced oxygen incorporation.},
doi = {10.1063/1.3415527},
url = {https://www.osti.gov/biblio/21476252}, journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 10,
volume = 107,
place = {United States},
year = {2010},
month = {5}
}