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Title: Radiation effects in single-walled carbon nanotube papers

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.3268470· OSTI ID:21476086
; ;  [1]; ;  [2];  [2]
  1. Electronics Science and Technology Division, U.S. Naval Research Laboratory, Washington, DC 20375 (United States)
  2. NanoPower Research Laboratories, Rochester Institute of Technology, Rochester, New York 14623 (United States)

The effects of ionizing radiation on the temperature-dependent conductivity of single-walled carbon nanotube (SWCNT) papers have been investigated in situ in a high vacuum environment. Irradiation of the SWCNT papers with 4.2 MeV alpha particles results in a steady decrease in the SWCNT paper conductivity, resulting in a 25% reduction in room temperature conductivity after a fluence of 3x10{sup 12} alpha particles/cm{sup 2}. The radiation-induced temperature-dependent conductivity modification indicates that radiation damage causes an increase in the effective activation barrier for tunneling-like conductivity and a concomitant increase in wavefunction localization of charge carriers within individual SWCNTs. The spatial defect generation within the SWCNT paper was modeled and confirms that a uniform displacement damage dose was imparted to the paper. This allows the damage coefficient (i.e., differential change in conductivity with fluence) for alpha particles, carbon ions, and protons to be compared with the corresponding nonionizing energy loss (NIEL) of the incident particle. The resulting nonlinear relationship with NIEL between these parameters is distinct from the more typical linear response observed in many bulk semiconductors and superconductors and indicates that localized radiation damage in the SWCNT papers has a greater impact than distributed damage. Although SWCNT papers behave largely as a bulk material with properties that are a convolution of the underlying SWCNT distribution, the radiation response appears to be largely dominated by degradation in the preferred one-dimensional conduction within these two-dimensionally confined nanostructures.

OSTI ID:
21476086
Journal Information:
Journal of Applied Physics, Vol. 107, Issue 1; Other Information: DOI: 10.1063/1.3268470; (c) 2010 American Institute of Physics; ISSN 0021-8979
Country of Publication:
United States
Language:
English