Two-micron lasing in NaLa{sub 1/2}Gd{sub 1/2}(WO{sub 4}){sub 2} crystals doped with Tm{sup 3+} ions

Journal Article · Sun Feb 28 00:00:00 EST 2010 · Quantum Electronics (Woodbury, N.Y.)

DOI:https://doi.org/10.1070/QE2010V040N02ABEH014242· OSTI ID:21471047

Bolshchikov, F A; Ryabochkina, P A ^[1]; Zharikov, Evgeny V; Lis, Denis A; Subbotin, Kirill A ^[2]; Zakharov, N G; Antipov, Oleg L ^[3]

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1. N.P. Ogarev Mordovian State University, Saransk (Russian Federation)
2. A M Prokhorov General Physics Institute, Russian Academy of Sciences, Moscow (Russian Federation)
3. Institute of Applied Physics, Russian Academy of Sciences, Nizhnii Novgorod (Russian Federation)

Lasing on the {sup 3}F{sub 4{yields}}{sup 3}H{sub 6} transition of Tm{sup 3+} ions in Tm{sup 3+}:NaLa{sub 1/2}Gd{sub 1/2}(WO{sub 4}){sub 2} crystals pumped by a diode laser is obtained for the first time. The {pi}- and {sigma}-polarised laser radiation at wavelengths of 1908 and 1918 nm was generated with a slope efficiency of 28% and 25%, respectively. (lasers)

• OSTI ID: 21471047
• Journal Information: Quantum Electronics (Woodbury, N.Y.), Vol. 40, Issue 2; Other Information: DOI: 10.1070/QE2010v040n02ABEH014242; ISSN 1063-7818
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CRYSTAL DOPING
CRYSTALS
EFFICIENCY
LASER RADIATION
THULIUM IONS
TUNGSTATES
WAVELENGTHS
CHARGED PARTICLES
ELECTROMAGNETIC RADIATION
IONS
OXYGEN COMPOUNDS
RADIATIONS
REFRACTORY METAL COMPOUNDS
TRANSITION ELEMENT COMPOUNDS
TUNGSTEN COMPOUNDS