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Title: Implantation of high-energy ions produced by femtosecond laser pulses

Abstract

Germanium ions of an expanding plasma were implanted in a silicon collector. The plasma was produced by a femtosecond laser pulse with an intensity of {approx}10{sup 15} W cm{sup -2} at the surface of the solid-state target. A technique was proposed for determining the energy characteristics of the ion component of the laser plasma from the density profile of the ions implanted in the substrate. (interaction of laser radiation with matter. laser plasma)

Authors:
; ; ;  [1];  [2]
  1. International Laser Center, M. V. Lomonosov Moscow State University, Moscow (Russian Federation)
  2. Department of Physics, M.V. Lomonosov Moscow State University, Moscow (Russian Federation)
Publication Date:
OSTI Identifier:
21470684
Resource Type:
Journal Article
Journal Name:
Quantum Electronics (Woodbury, N.Y.)
Additional Journal Information:
Journal Volume: 35; Journal Issue: 1; Other Information: DOI: 10.1070/QE2005v035n01ABEH002754; Journal ID: ISSN 1063-7818
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 70 PLASMA PHYSICS AND FUSION TECHNOLOGY; DENSITY; GERMANIUM IONS; ION IMPLANTATION; LASER TARGETS; LASER-PRODUCED PLASMA; LASERS; PULSES; SILICON; SOLIDS; SUBSTRATES; SURFACES; CHARGED PARTICLES; ELEMENTS; IONS; PHYSICAL PROPERTIES; PLASMA; SEMIMETALS; TARGETS

Citation Formats

Volkov, Roman V, Golishnikov, D M, Gordienko, Vyacheslav M, Savel'ev, Andrei B, and Chernysh, V S. Implantation of high-energy ions produced by femtosecond laser pulses. United States: N. p., 2005. Web. doi:10.1070/QE2005V035N01ABEH002754.
Volkov, Roman V, Golishnikov, D M, Gordienko, Vyacheslav M, Savel'ev, Andrei B, & Chernysh, V S. Implantation of high-energy ions produced by femtosecond laser pulses. United States. https://doi.org/10.1070/QE2005V035N01ABEH002754
Volkov, Roman V, Golishnikov, D M, Gordienko, Vyacheslav M, Savel'ev, Andrei B, and Chernysh, V S. 2005. "Implantation of high-energy ions produced by femtosecond laser pulses". United States. https://doi.org/10.1070/QE2005V035N01ABEH002754.
@article{osti_21470684,
title = {Implantation of high-energy ions produced by femtosecond laser pulses},
author = {Volkov, Roman V and Golishnikov, D M and Gordienko, Vyacheslav M and Savel'ev, Andrei B and Chernysh, V S},
abstractNote = {Germanium ions of an expanding plasma were implanted in a silicon collector. The plasma was produced by a femtosecond laser pulse with an intensity of {approx}10{sup 15} W cm{sup -2} at the surface of the solid-state target. A technique was proposed for determining the energy characteristics of the ion component of the laser plasma from the density profile of the ions implanted in the substrate. (interaction of laser radiation with matter. laser plasma)},
doi = {10.1070/QE2005V035N01ABEH002754},
url = {https://www.osti.gov/biblio/21470684}, journal = {Quantum Electronics (Woodbury, N.Y.)},
issn = {1063-7818},
number = 1,
volume = 35,
place = {United States},
year = {Mon Jan 31 00:00:00 EST 2005},
month = {Mon Jan 31 00:00:00 EST 2005}
}